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KVR13LE9S8-4 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part # KVR13LE9S8-4
Description  4GB 1Rx8 512M x 72-Bit PC3L-10600
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KVR13LE9S8/4
4GB 1Rx8 512M x 72-Bit PC3L-10600
CL9 240-Pin ECC DIMM
DESCRIPTION
This document describes ValueRAM's 512M x 72-bit (4GB)
DDR3L-1333 CL9 SDRAM (Synchronous DRAM), 1Rx8, ECC,
low voltage, memory module, based on nine 512M x 8-bit FBGA
components. The SPD is programmed to JEDEC standard
latency DDR3-1333 timing of 9-9-9 at 1.35V or 1.5V. This 240-
pin DIMM uses gold contact fingers. The electrical and me-
chanical specifications are as follows:
FEATURES
JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~
1.575V) Power Supply
VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
Bi-directional Differential Data Strobe
Thermal Sensor Grade B
Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB: Height 1.18” (30mm), single sided component
Document No. VALUERAM1342-001.A00
04/26/13
Page 1
Memory Module Specifications
Continued >>
SPECIFICATIONS
CL(IDD)
9 cycles
Row Cycle Time (tRCmin)
49.5ns (min.)
Refresh to Active/Refresh
260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin)
36ns (min.)
Maximum Operating Power
(1.35V) = 1.761 W*
(1.50V) = 1.957 W*
UL Rating
94 V - 0
Operating Temperature
0o C to 85o C
Storage Temperature
-55o C to +100o C
*Power will vary depending on the SDRAM.


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