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KAI-02050 Datasheet(PDF) 9 Page - ON Semiconductor

Part # KAI-02050
Description  Interline CCD Image Sensor
Download  41 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

KAI-02050 Datasheet(HTML) 9 Page - ON Semiconductor

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KAI−02050
www.onsemi.com
9
IMAGING PERFORMANCE
Typical Operational Conditions
Unless otherwise noted, the Imaging Performance Specifications are measured using the following conditions.
Table 6. TYPICAL OPERATIONAL CONDITIONS
Description
Condition
Notes
Light Source
Continuous Red, Green and Blue LED Illumination.
For monochrome sensor, only green LED used.
Operation
Nominal Operating Voltages and Timing.
Specifications
Table 7. PERFORMANCE SPECIFICATIONS
Description
Symbol
Min.
Nom.
Max.
Unit
Sampling
Plan
Temperature
Tested at
(5C)
ALL CONFIGURATIONS
Dark Field Global Non-Uniformity
DSNU
2.0
mVpp
Die
27, 40
Bright Field Global Non-Uniformity
(Note 1)
2.0
5.0
% rms
Die
27, 40
Bright Field Global Peak to Peak
Non-Uniformity (Note 1)
PRNU
5.0
15.0
% pp
Die
27, 40
Bright Field Center Non-Uniformity
(Note 1)
1.0
2.0
% rms
Die
27, 40
Maximum Photoresponse Non-Linearity
(Note 2)
NL
2
%
Design
Maximum Gain Difference between
Outputs (Note 2)
DG
10
%
Design
Maximum Signal Error due to
Non-Linearity Differences (Note 2)
DNL
1
%
Design
Horizontal CCD Charge Capacity
HNe
55
ke
Design
Vertical CCD Charge Capacity
VNe
45
ke
Design
Photodiode Charge Capacity (Note 3)
PNe
20
ke
Die
27, 40
Horizontal CCD Charge Transfer
Efficiency
HCTTE
0.999995
0.999999
Die
Vertical CCD Charge Transfer Efficiency
VCTE
0.999995
0.999999
Die
Photodiode Dark Current
IPD
7
70
e/p/s
Die
40
Vertical CCD Dark Current
IVD
100
300
e/p/s
Die
40
Image Lag
Lag
10
e
Design
Anti-Blooming Factor
XAB
300
Design
Vertical Smear
Smr
−100
dB
Design
Read Noise (Note 4)
ne−T
12
erms
Design
Dynamic Range (Notes 4, 5)
DR
64
dB
Design
Output Amplifier DC Offset
VODC
9.4
V
Die
27, 40
Output Amplifier Bandwidth (Note 6)
f−3db
250
MHz
Die
Output Amplifier Impedance
ROUT
127
W
Die
27, 40
Output Amplifier Sensitivity
DV/DN
34
mV/e
Design


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