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KAI-02150-FBA-FD-BA Datasheet(PDF) 4 Page - ON Semiconductor |
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KAI-02150-FBA-FD-BA Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 42 page KAI−02150 www.onsemi.com 4 DEVICE DESCRIPTION Architecture Figure 2. Block Diagram 22 12 Dark 12 20 V1B 20 Buffer 20 20 22 1 Dummy 1 Dummy 960 960 960 960 V2B V3B V4B V1T V2T V3T V4T RDa Ra VDDa VOUTa GND RDc Rc VDDc VOUTc GND RDd Rd VDDd VOUTd GND RDb Rb VDDb VOUTb GND V1B V2B V3B V4B V1T V2T V3T V4T H2SLa OGa H2SLc OGc H2SLd OGd H2SLb OGb ESD ESD 1 22 20 10 1 22 20 10 1 22 20 10 1 22 20 10 DevID 1920 (H) × 1080 (V) 5.5 mm × 5.5 mm Pixels (Last VCCD Phase = V1 → H1S) Dark Reference Pixels There are 12 dark reference rows at the top and 12 dark rows at the bottom of the image sensor. The dark rows are not entirely dark and so should not be used for a dark reference level. Use the 22 dark columns on the left or right side of the image sensor as a dark reference. Under normal circumstances use only the center 20 columns of the 22 column dark reference due to potential light leakage. Dummy Pixels Within each horizontal shift register there are 11 leading additional shift phases. These pixels are designated as dummy pixels and should not be used to determine a dark reference level. In addition, there is one dummy row of pixels at the top and bottom of the image. Active Buffer Pixels 20 unshielded pixels adjacent to any leading or trailing dark reference regions are classified as active buffer pixels. These pixels are light sensitive but are not tested for defects and non-uniformities. Image Acquisition An electronic representation of an image is formed when incident photons falling on the sensor plane create electron-hole pairs within the individual silicon photodiodes. These photoelectrons are collected locally by the formation of potential wells at each photosite. Below photodiode saturation, the number of photoelectrons collected at each pixel is linearly dependent upon light level and exposure time and non-linearly dependent on wavelength. When the photodiodes charge capacity is reached, excess electrons are discharged into the substrate to prevent blooming. ESD Protection Adherence to the power-up and power-down sequence is critical. Failure to follow the proper power-up and power-down sequences may cause damage to the sensor. See Power-Up and Power-Down Sequence section. |
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