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KAF-16801 Datasheet(PDF) 1 Page - ON Semiconductor |
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KAF-16801 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 16 page © Semiconductor Components Industries, LLC, 2015 July, 2015 − Rev. 3 1 Publication Order Number: KAF−16801/D KAF-16801 4096 (H) x 4096 (V) Full Frame CCD Image Sensor Description The KAF−16801 is a high performance area CCD (charge-coupled device) image sensor with 4096 (H) × 4096 (V) photo active pixels designed for a wide range of image sensing applications. The sensor incorporates true two-phase CCD technology, simplifying the support circuits required to drive the sensor as well as reducing dark current without compromising charge capacity. The sensor also utilizes the TRUESENSE Transparent Gate Electrode to improve sensitivity compared to the use of a standard front side illuminated polysilicon electrode. Table 1. GENERAL SPECIFICATIONS Parameter Typical Value Architecture Full Frame CCD Pixel Count 4096 (H) × 4096 (V) Pixel Size 9.0 mm (H) × 9.0 mm (V) Active Image Size 36.88 mm (H) × 36.88 mm (V) 52.1 mm (Diagonal) 645 1.3x Optical Format Chip Size 38.60 mm (H) × 37.76 mm (V) Optical Fill Factor 100% Saturation Signal 100,000 electrons Output Sensitivity 13 mV/e− Dark Current (Accumulation Model) < 10 pA/cm2 Dark Current Doubling Rate 6 °C Dynamic Range (Saturation Signal/Dark Noise) 76 dB Quantum Efficiency (450, 550, 650 nm) 40%, 52%, 65% Maximum Date Rate 10 MHz Package CERDIP Package (Sidebrazed) Cover Glass Clear NOTE: Parameters above are specified at T = 25 °C unless otherwise noted. www.onsemi.com Figure 1. KAF−16801 Full Frame CCD Image Sensor Features • True Two Phase Full Frame Architecture • TRUESENSE Transparent Gate Electrode for High Sensitivity • Low Dark Current • High Output Sensitivity Application • Scientific Imaging See detailed ordering and shipping information on page 2 of this data sheet. ORDERING INFORMATION |
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