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KVR16R11S4-8KF Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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1 / 2 page  KVR16R11S4/8KF 8GB 1Rx4 1G x 72-Bit PC3-12800 CL11 Registered w/Parity 240-Pin DIMM DESCRIPTION This document describes ValueRAM's 1G x 72-bit (8GB) DDR3- 1600 CL11 SDRAM (Synchronous DRAM), registered w/parity, 1Rx4 ECC memory module, based on eighteen 1G x 4-bit FBGA components. The SPD is programmed to JEDEC stan- dard latency DDR3-1600 timing of 11-11-11 at 1.5V. This 240- pin DIMM uses gold contact fingers. The electrical and me- chanical specifications are as follows: FEATURES • JEDEC standard 1.5V (1.425V ~1.575V) Power Supply • VDDQ = 1.5V (1.425V ~ 1.575V) • 800MHz fCK for 1600Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] • Bi-directional Differential Data Strobe • Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%) • On Die Termination using ODT pin • On-DIMM thermal sensor (Grade B) • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C • Asynchronous Reset • PCB : Height 1.180” (30.00mm), double sided component Document No. VALUERAM1372-001.A00 11/11/13 Page 1 Memory Module Specifications SPECIFICATIONS CL(IDD) 11 cycles Row Cycle Time (tRCmin) 48.125ns (min.) Refresh to Active/Refresh 260ns (min.) Command Time (tRFCmin) Row Active Time (tRASmin) 35ns (min.) Maximum Operating Power TBD W* UL Rating 94 V - 0 Operating Temperature 0o C to 85o C Storage Temperature -55o C to +100o C *Power will vary depending on the SDRAM and Register/PLL used. Continued >> SDRAM SUPPORTED Kingston (F-Die) |
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