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2N3719 Datasheet(PDF) 1 Page - Microsemi Corporation |
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2N3719 Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 3 page MSC1026.PDF 02-24-99 2N3719 ABSOLUTE MAXIMUM RATINGS: ABSOLUTE MAXIMUM RATINGS: SYMBOL CHARACTERISTIC VALUE UNITS VCEO* Collector-Emitter Voltage 40 Vdc VCB* Collector-Base Voltage 40 Vdc VEB* Emitter-Base Voltage 4.0 Vdc IC* Peak Collector Current 10 Adc IC* Continuous Collector Current 3.0 Adc IB* Base Current 0.5 Adc TSTG* Storage Temperature -65 to 200 °°C TJ* Operating Junction Temperature -65 to 200 °°C PD* Total Device Dissipation TC = 25°°C Derate above 25 °°C 6.0 34.3 Watts mW/ °°C PD* θθ JC Total Device Dissipation TA = 25°°C Derate above 25 °°C Thermal Resistance Junction to Case Junction to Ambient 1.0 5.71 29 175 Watts mW/ °°C °°C/W °°C/W Silicon PNP Power Transistors FEATURES: • Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40 Vdc (Min) - 2N3719 • DC Current Gain: hFE = 25-180 @ IC = 1.0 Adc • Low Collector-Emitter Saturation Voltage: VCE(sat) = 0.75 Vdc @ IC = 1.0 Adc • High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ) TO-5 APPLICATIONS: • High-Speed Switching • Medium-Current Switching • High-Frequency Amplifiers 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 DESCRIPTION: DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200 °°C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. * Indicates JEDEC registered Data. |
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