SSF20NS60F_15 datasheet(1/7 Pages) GOOD-ARK

Part #	SSF20NS60F

Description	600V N-Channel MOSFET

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Manufacturer	GOOD-ARK [GOOD-ARK Electronics]

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SSF20NS60F

600V N-Channel MOSFET

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Rev.1.2

Main Product Characteristics

Features and Benefits

Description

Absolute Max Rating

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V①

20

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V①

13

IDM

Pulsed Drain Current②

80

A

Power Dissipation③

34.7

W

PD @TC = 25°C

Linear Derating Factor

0.27

W/°C

VDS

Drain-Source Voltage

600

V

VGS

Gate-to-Source Voltage

± 30

V

EAS

Single Pulse Avalanche Energy @ L=13.8mH

248

mJ

IAR

Avalanche Current @ L=13.8mH

6

A

TJ

TSTG

Operating Junction and Storage Temperature Range

-55 to + 150

°C

VDSS

600V

RDS(on)

170mΩ(typ.)

ID

20A

TO220F

Marking and Pin

Assignment

Schematic Diagram



High dv/dt and avalanche capabilities



100% avalanche tested



Low input capacitance and gate charge



Low gate input resistance



Lead free product

The SSF20NS60F series MOSFET is a new technology, which combines an innovative super junction

technology and advance process.This new technology achieves low RDS (ON), energy saving, high

reliability and uniformity, superior power density and space saving.

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SSF20NS60F Datasheet(PDF) 1 Page - GOOD-ARK Electronics

SSF20NS60F Datasheet(HTML) 1 Page - GOOD-ARK Electronics

Similar Part No. - SSF20NS60F_15

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