SSF11NS60

600V N-Channel MOSFET

www.goodark.com

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Rev.1.2

Main Product Characteristics

Features and Benefits

Description

Absolute Max Rating

Symbol

Parameter

Max.

Units

11

7

44

A

162

W

Linear Derating Factor

1.5

W/°C

Drain-Source Voltage

600

V

Gate-to-Source Voltage

± 30

V

Single Pulse Avalanche Energy @ L=22.5mH

281

mJ

Avalanche Current @ L=22.5mH

5

A

Operating Junction and Storage Temperature Range

-55 to +150

°C

600V

0.36Ω (typ.)

11A

TO-220

Marking and Pin

Assignment

Schematic Diagram



High dv/dt and avalanche capabilities



100% avalanche tested



Low input capacitance and gate charge



Low gate input resistance



Lead free product

The SSF11NS60 series MOSFET is a new technology, which combines an innovative super junction

technology and advance process.

reliability and uniformity, superior power density and space saving.