SSF10N60F

600V N-Channel MOSFET

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Rev.1.0

Main Product Characteristics

Features and Benefits

Description

Absolute Max Rating

Symbol

Parameter

Max.

Units

10

6

40

A

156

W

Linear Derating Factor

1.2

W/°C

Drain-Source Voltage

600

V

Gate-to-Source Voltage

± 30

V

Single Pulse Avalanche Energy @ L=14.2mH

700

mJ

Avalanche Current @ L=14.2mH

10

A

Operating Junction and Storage Temperature Range

-55 to + 150

°C

600V

0.8ohm(typ.)

10A

TO220F

Marking and Pin

Assignment

Schematic Diagram



Advanced trench MOSFET process technology



Special designed for PWM, load switching and

general purpose applications



Ultra low on-resistance with low gate charge



Fast switching and reverse body recovery



150℃ operating temperature



Lead free product

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the

on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely

efficient and reliable device for use in power switching application and a wide variety of other applications.