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SSF7NS65UF Datasheet(PDF) 2 Page - GOOD-ARK Electronics |
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SSF7NS65UF Datasheet(HTML) 2 Page - GOOD-ARK Electronics |
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2 / 7 page  SSF7NS65UF 650V N-Channel MOSFET www.goodark.com Page 2 of 7 Rev.1.0 Thermal Resistance Symbol Characteristics Typ. Max. Units RθJC Junction-to-case ③ — 3.8 ℃/W RθJA Junction-to-ambient (t ≤ 10s) ④ — 80 ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 650 — — V VGS = 0V, ID = 250μA — 0.6 0.75 VGS=10V,ID = 1A — 1.3 — Ω TJ = 125°C — 0.64 0.9 VGS=10V,ID = 2.8A RDS(on) Static Drain-to-Source on-resistance — 1.5 — Ω TJ = 125°C 2 — 4 VDS = VGS, ID = 250μA VGS(th) Gate threshold voltage — 2.2 — V TJ = 125°C — — 1 VDS =650V,VGS = 0V IDSS Drain-to-Source leakage current — — 50 μA TJ = 125°C — — 100 VGS =30V IGSS Gate-to-Source forward leakage — — -100 nA VGS = -30V Qg Total gate charge — 13 — Qgs Gate-to-Source charge — 2.6 — Qgd Gate-to-Drain("Miller") charge — 3.1 — nC ID = 5A, VDS=200V, VGS = 10V td(on) Turn-on delay time — 12 — tr Rise time — 7.5 — td(off) Turn-Off delay time — 30 — tf Fall time — 18 — ns VGS=10V, VDS =400V, RGEN=10.2Ω,ID =1.5A Ciss Input capacitance — 500 — Coss Output capacitance — 24 — Crss Reverse transfer capacitance — 3 — pF VGS = 0V VDS = 100V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 7 ① A ISM Pulsed Source Current (Body Diode) — — 28 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.8 1.2 V IS=2.8A, VGS=0V trr Reverse Recovery Time — 126 — nS Qrr Reverse Recovery Charge — 560 — nC TJ = 25°C, IF = 1.5A, di/dt = 100A/μs |
Similar Part No. - SSF7NS65UF_15 |
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