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2N3866 Datasheet(PDF) 2 Page - Microsemi Corporation |
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2N3866 Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 5 page MSC1067.PDF 3-10-99 2N3866 / 2N3866A ELECTRICAL SPECIFICATIONS (Tcase = 25 °C) STATIC (off) Symbol Test Conditions Value Min. Typ. Max. Unit BVCER Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, RBE = 10 ohms) 55 - - Vdc BVCEO Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) 30 - - Vdc BVCBO Collector-Base Breakdown Voltage (IE = 0, IC = 0.1 mAdc) 55 - - Vdc BVEBO Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) 3.5 - - Vdc ICEO Collector Cutoff Current (VCE = 28 Vdc, IB = 0) - - 20 µA ICEX Collector Cutoff Current (VCE = 55 Vdc, VBE = 1.5 Vdc) - - 100 µA (on) HFE DC Current Gain (IC = 360 mAdc, VCE = 5.0 Vdc) Both (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866 (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866A 5.0 10 25 - - - - 200 200 - - - VCE(sat) Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 20 mAdc) - - 1.0 Vdc DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit fT Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz) 2N3866 2N3866A 500 800 800 - - - MHz COB Output Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) - 2.8 3.5 pF |
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