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2N3868 Datasheet(PDF) 2 Page - Microsemi Corporation

Part # 2N3868
Description  Silicon PNP Power Transistors
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N3868 Datasheet(HTML) 2 Page - Microsemi Corporation

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2N3867, S; 2N3868, S JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
IC = 500 mAdc, VCE = 1.0 Vdc
2N3867, S
2N3868, S
IC = 1.5 Adc, VCE = 2.0 Vdc
2N3867, S
2N3868, S
IC = 2.5 Adc, VCE = 3.0 Vdc
2N3867, S
2N3868, S
IC = 3.0 Adc, VCE = 5.0 Vdc
All Types
hFE
50
35
40
30
25
20
20
200
150
Collector-Emitter Saturation Voltage
IC = 500 mAdc, IB = 50 mAdc
IC = 1.5 Adc, IB = 150 mAdc
IC = 2.5 Adc, IB = 250 mAdc
VCE(sat)
0.5
0.75
1.5
Vdc
Base-Emitter Saturation Voltage
IC = 500 mAdc, IB = 50 mAdc
IC = 1.5 Adc, IB = 150 mAdc
IC = 2.5 Adc, IB = 250 mAdc
VBE(sat)
0.9
1.0
1.4
2.0
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio
IC = 100 mAdc, VCE = 5.0 Vdc, f = 20 MHz
h
fe
3.0
12
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
120
pF
Input Capacitance
VEB = 3.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cibo
800
pF
SWITCHING CHARACTERISTICS
Delay Time
VCC = -30 Vdc, VEB = 0,
td
35
ηs
Rise Time
IC = 1.5 Adc, IB1 = 150 mAdc
tr
65
ηs
Storage Time
VCC = -30 Vdc, VEB = 0,
ts
500
ηs
Fall Time
IC = 1.5Adc, IB1 = IB2 = 150 mAdc
tf
100
ηs
Turn-On Time
VCC = 30, IC = 1.5 Adc, IB = 150 mAdc
ton
100
ηs
Turn-Off Time
VCC = 30, IC = 1.5 Adc, IB = 150 mAdc
toff
600
ηs
SAFE OPERATING AREA
DC Tests
TC = 25
0C, 1 Cycle, t = 1.0 s
Test 1
VCE = 3.33 Vdc, IC = 3.0 Adc
Test 2
VCE = 40 Vdc, IC = 160 mAdc
2N3867, S
VCE = 60 Vdc, IC = 80 mAdc
2N3868, S
(3) Pulse Test: Pulse Width = 300
µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


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