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SSF4NS60D Datasheet(PDF) 2 Page - GOOD-ARK Electronics |
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SSF4NS60D Datasheet(HTML) 2 Page - GOOD-ARK Electronics |
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2 / 7 page  SSF4NS60D 600V N-Channel MOSFET www.goodark.com Page 2 of 7 Rev.1.0 Thermal Resistance Symbol Characteristics Typ. Max. Units RθJC Junction-to-case ③ — 2.5 ℃/W RθJA Junction-to-ambient (t ≤ 10s) ④ — 75 ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 600 — — V VGS = 0V, ID = 250μA — 1.1 1.2 VGS=10V,ID = 2.8A RDS(on) Static Drain-to-Source on-resistance — 2.8 — Ω TJ = 125°C 2 — 4 VDS = VGS, ID = 250μA VGS(th) Gate threshold voltage — 2.7 — V TJ = 125°C — — 1 VDS = 600V,VGS = 0V IDSS Drain-to-Source leakage current — — 50 μA TJ = 125°C — — 100 VGS =30V IGSS Gate-to-Source forward leakage — — -100 nA VGS = -30V Qg Total gate charge — 8.3 — Qgs Gate-to-Source charge — 2.3 — Qgd Gate-to-Drain("Miller") charge — 2.6 — nC ID = 4A, VDS=100V, VGS = 10V td(on) Turn-on delay time — 9.8 — tr Rise time — 17.6 — td(off) Turn-Off delay time — 19.0 — tf Fall time — 15.3 — ns VGS=10V, VDS =380V, RGEN=18Ω,ID =4A Ciss Input capacitance — 268 — Coss Output capacitance — 222 — Crss Reverse transfer capacitance — 4.62 — pF VGS = 0V VDS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 4 ① A ISM Pulsed Source Current (Body Diode) — — 12 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.88 1.2 V IS=2.8A, VGS=0V trr Reverse Recovery Time — 180 — nS Qrr Reverse Recovery Charge — 1304 — nC TJ = 25°C, IF = IS, di/dt = 100A/μs |
Similar Part No. - SSF4NS60D_15 |
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Similar Description - SSF4NS60D_15 |
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