MSC1343.PDF 010-29-99

2N7372 - PNP

2N7373 - NPN

ABSOLUTE MAXIMUM RATINGS:

ABSOLUTE MAXIMUM RATINGS:

SYMBOL

CHARACTERISTIC

2N7372

2N7373

UNITS

Collector-Base Voltage

- 100

100

V

Collector-Emitter Voltage

- 80

80

V

Emitter-Base Voltage

- 5.5

5.5

V

Continuous Collector Current

5

5

A

Peak Collector Current

10

10

A

Continuous Base Current

2

2

A

Storage Temperature

-65 to 200

Operating Junction Temperature

-65 to 200

Lead Temperature 1/16" from cast for 10 sec.

300

Unclamped Inductive Load Energy

15

mj

Continuous Device

58

58

W

33

33

W

Thermal Resistance Junction to Case

3

3

Complimentary

Power Transistors

in Hermetic Isolated

TO-254AA Packages

JAN/TX/TXV/JANS

FEATURES:

FEATURES:

•

Planar Process for Reliability

•

Fast Switching

•

High-Frequency Power Transistors

•

For Complementary Use with Each Other

•

•

Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Package

•

Leads can be Formed

•

All Terminals Isolated from the Case

TO-254AA

APPLICATIONS:

APPLICATIONS:

•

Power Supply

•

Inverters and Converters

•

General Purpose Amplifiers

7516 Central Industrial Drive

Riviera Beach, Florida

33404

PHONE: (561) 842-0305

FAX: (561) 845-7813

DESCRIPTION:

DESCRIPTION:

These power transistors are produced by PPC's MULTIPLE DIFFUSED

PLANAR process. This technology produces high voltage devices with

excellent switching speeds, frequency response, gain linearity, saturation

voltages, high current gain, and safe operating areas. These devices have

excellent unclamped and clamped reverse energy ratings with the base to

emitter reversed biased.

Ultrasonically bonded wire leads and gold eutectic die bonding are utilized to

permit operating temperature to 200

insures maximum reliability and long life. The isolated low profile package

allows for easy PC board fit.