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2N2326S Datasheet(PDF) 1 Page - Microsemi Corporation |
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2N2326S Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 2 page TECHNICAL DATA SILICON CONTROLLED RECTIFIER Qualified per MIL-PRF-19500/276 Devices Qualified Level 2N2323 2N2323S 2N2323A 2N2323AS 2N2324 2N2324S 2N2324A 2N2324AS 2N2326 2N2326S 2N2326A 2N2326AS 2N2328 2N2328S 2N2328A 2N2328AS 2N2329 2N2329S JAN JANTX JANTXV MAXIMUM RATINGS Ratings Sym 2N2323,S/ 2N2323A,S 2N2324,S/ 2N2324A,S 2N2326,S/ 2N2326A,S 2N2328,S/ 2N2328A,S 2N2329,S Unit Reverse Voltage VRM 50 100 200 300 400 Vdc Working Peak Reverse Voltage VRM 75 150 300 400 500 Vpk Forward Blocking Voltage VFBXM 50 (3/4) 100 (3/4) 200 (3/4) 300 (3/4) 400 (3) Vpk Average Forward Current (1) IO 0.22 Adc Forward Current Surge Peak (2) IFSM 15 Adc Cathode-Gate Current VKGM 6 Vpk Operating Temperature Top -65 to +125 0C Storage Junction Temp Tstg -65 to +150 0C 1) This average forward current is for an ambient temperature of 80 0C and 180 electrical degrees of conduction. 2) Surge current is non-recurrent. The rate of rise of peak surge current shall not exceed 40 A during the first 5 µs after switching from the ‘off’ (blocking) to the ‘on’ (conducting) state. This is measured from the point where the thyristor voltage has decayed to 90% of its initial blocking value. 3) Gate connected to cathode through 1,000 ohm resistor. 4) Gate connected to cathode through 2,000 ohm resistor. TO-5 *See appendix A for package outline ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit SUBGROUP 2 TESTING Reverse Blocking Current R2 = 1 k µ 2N2323 thru 2N2329 2N2323S thru 2N2329S R2 = 2 k µ 2N2323A thru 2N2328A 2N2323AS thru 2N2328AS VR = 50 Vdc 2N2323, S, A, AS VR = 100 Vdc 2N2324, S, A, AS VR = 200 Vdc 2N2326, S, A, AS VR = 300 Vdc 2N2328, S, A, AS VR = 400 Vdc 2N2329, S, IRBX1 10 µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 |
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