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NB3N108KMNG Datasheet(PDF) 4 Page - ON Semiconductor |
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NB3N108KMNG Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 9 page NB3N108K http://onsemi.com 4 Table 4. DC CHARACTERISTICS (VCC = 3.0 V to 3.6 V, TA = −40°C to +85°C Note 4) Symbol Characteristic Min Typ Max Unit IGND GND Supply Current (All Outputs Loaded) 60 90 mA ICC Power Supply Current (All Outputs Loaded) 190 230 mA IIH Input HIGH Current 2.0 150 mA IIL Input LOW Current −150 −2.0 mA RTIN Internal Input Termination Resistor 45 50 55 W DIFFERENTIAL INPUT DRIVEN SINGLE−ENDED Vth Input Threshold Reference Voltage Range (Note 5) 350 VCC − 1000 mV VIH Single*Ended Input HIGH Voltage Vth + 150 VCC mV VIL Single*Ended Input LOW Voltage GND Vth − 150 mV DIFFERENTIAL INPUTS DRIVEN DIFFERENTIALLY (Figures 7, 8 and 9) VIHD Differential Input HIGH Voltage 425 VCC − 850 mV VILD Differential Input LOW Voltage GND VCC − 1000 mV VID Differential Input Voltage (VIHD * VILD) 150 VCC − 850 mV VCMR Input Common Mode Range 350 VCC − 1000 mV HCSL OUTPUTS (Figure 4) VOH Output HIGH Voltage 600 740 900 mV VOL Output LOW Voltage −150 0 150 mV NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 4. Measurements taken with with outputs loaded 50 W to GND, see Figure 6. Connect a 475 W resistor from IREF (Pin 1) to GND per Figure 6. 5. Vth is applied to the complementary input when operating in single ended mode per Figure 4. |
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