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NB3W1900LMNG Datasheet(PDF) 6 Page - ON Semiconductor |
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NB3W1900LMNG Datasheet(HTML) 6 Page - ON Semiconductor |
6 / 18 page NB3W1900L http://onsemi.com 6 Table 8. ABSOLUTE MAXIMUM RATINGS (Note 2) Symbol Parameter Conditions Min Typ Max Unit VDD / VDDA / VDDR 3 .3 V Core Supply Voltage (Note 3) 4.6 V VDD / VDDIO 3 .3 V Logic and Output Supply Voltage (Note 3) 4.6 V VIH Input High Voltage Except for SMBus Interface VDD + 0.5 V VIH VIHSMB SMBus Clock and Data Pins 5.5 V VIL Input Low Voltage GND − 0.5 − V Ts Storage Temperature −65 150 °C TJ Junction Temperature 125 °C ESD prot . ESD Protection (Human Body) Human Body Model 2000 V qJA Thermal Resistance Junction−to−Ambient Still air 18.1 °C/W qJC Thermal Resistance Junction−to−Case 5.0 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Guaranteed by design and characterization, not tested in production. 3. Operation under these conditions is neither implied nor guaranteed . Table 9. ELECTRICAL CHARACTERISTICS − CLOCK INPUT PARAMETERS (TA =0°C − 70°C; Supply Voltage VDD/VDDA = 3.3 V ±5%, VDDIO = 1.05 to 3.3 V ±5%. See Test Loads for Loading Conditions) (Note 4) Symbol Parameter Conditions Min Typ Max Unit VIHDIF Input High Voltage − CLK_IN Differential Inputs (single-ended measurement) 600 1150 mV VILDIF Input Low Voltage − CLK_IN Differential Inputs (single-ended measurement) VSS − 300 300 mV VCOM Input Common Mode Voltage − CLK_IN (not spec’d) Common Mode Input Voltage 300 1000 mV VSWING Input Amplitude − CLK_IN not spec’d Peak to Peak Value 300 1450 mV dv/dt Input Slew Rate − CLK_IN (Note 5) Measured Differentially 0.4 8 V/ns IIN Input Leakage Current VIN = VDD, VIN = GND −5 5 mA dtin Input Duty Cycle Measurement from Differential Waveform 45 55 % JDIFIn Input Jitter − Cycle to Cycle Differential Measurement 0 125 ps Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Guaranteed by design and characterization, not tested in production. 5. Slew rate measured through ±75 mV window centered around differential zero Table 10. ELECTRICAL CHARACTERISTICS−INPUT/SUPPLY/COMMON OUTPUT PARAMETERS (TA =0°C − 70°C; Supply Voltage VDD/VDDA = 3.3 V ±5%, VDDIO = 1.05 V to 3.3 V ±5%. See Test Loads for Loading Conditions) (Note 6) Symbol Parameter Conditions Min Typ Max Unit VIH Input High Voltage Single-ended inputs, except SMBus, low threshold and tri-level inputs 2 VDD + 0.3 V VIL Input Low Voltage Single-ended inputs, except SMBus, low threshold and tri−level inputs GND − 0.3 0.8 V IIN Input Current Single-ended inputs, VIN = GND, VIN = VDD −5 5 mA VIH_FS Input High Voltage (Note 7) 0.7 VDD + 0.3 V VIL_FS Input Low Voltage (Note 7) GND − 0.3 0.35 V |
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