NVD5830NL datasheet(5/7 Pages) ONSEMI

Part #	NVD5830NL

Description	Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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NVD5890NL

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5

TYPICAL PERFORMANCE CURVES

DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

Coss

Ciss

7000

10

40

30

20

VGS = 0 V

TJ = 25°C

6000

5000

4000

3000

2000

1000

0

Crss

Figure 8. Gate−To−Source Voltage vs.

Total Charge

QG, TOTAL GATE CHARGE (nC)

VDS = 15 V

ID = 50 A

TJ = 25°C

Qgd

Qgs

QT

0

10

90

80

70

0

8

6

4

2

0

20

30

40

50

60

10

100

1000

1

10

100

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

RG, GATE RESISTANCE (W)

tr

td(off)

td(on)

tf

VDD = 20 V

ID = 50 A

VGS = 10 V

0

25

50

75

100

0.60

0.65

0.70

0.75

0.80

0.85

0.90

0.95 1.00

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage vs. Current

VGS = 0 V

TJ = 25°C

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

VGS ≤ 20 V

SINGLE PULSE

TC = 25°C

1 ms

100

ms

10 ms

dc

10

ms

10

100

10

100

1000

1

0.1

1

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