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UCC28610D Datasheet(PDF) 11 Page - Texas Instruments |
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UCC28610D Datasheet(HTML) 11 Page - Texas Instruments |
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11 / 48 page  -40 -20 120 T B – Board Temperature – °C 0 20 40 60 80 100 0 1.5 2.5 0.5 1.0 2.0 SOIC (D) DIP (P) Package 0 P DISS – Power Dissipation – W 10 0.0 20 60 30 50 40 0.50 1.00 0.25 0.75 SOIC (D) DIP (P) Package 20 180 40 60 160 100 120 -40 -25 -10 125 T A – Ambient Temperature – °C 5 20 35 50 65 80 95 110 80 140 2 0 4 6 12 8 10 -40 -25 -10 125 T A – Ambient Temperature – °C 5 20 35 50 65 80 95 110 High-Side Drive VDD Switch UCC28610 www.ti.com SLUS888G – JANUARY 2009 – REVISED SEPTEMBER 2015 Typical Characteristics (continued) Unless otherwise stated: VDD = 12 V, VGG = 12 V, ZCD = 1 V, IFB = 10 µA, GND = 0 V, a 0.1-μF capacitor between VDD and GND, a 0.1- μF capacitor between VGG and GND, RCL = 33.2 kΩ, RMOT = 380 kΩ, –40°C < TA < +125°C, TJ = TA Figure 14. Driver RDS(on) vs Ambient Temperature Figure 15. RDS(on) of High Side Drive and VDD Switch vs Temperature Figure 16. Safe Operating Area vs Board Temperature Figure 17. Thermal Coefficient – θJB vs Power Dissipation Copyright © 2009–2015, Texas Instruments Incorporated Submit Documentation Feedback 11 Product Folder Links: UCC28610 |
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