KAF-0402-AAA-CP-B1 datasheet(8/16 Pages) ONSEMI

Part #	KAF-0402-AAA-CP-B1

Description	FULL FRAME CCD IMAGE SENSOR

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Manufacturer	ONSEMI [ON Semiconductor]

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KAF−0402

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DEFECT DEFINITIONS

Table 6. SPECIFICATIONS (Defect tests performed at T = 25

°C)

Grade

Point Defect

Cluster Defect

Column Defect

C1

< 5

0

C2

< 10

< 4

0

Point Defects

Dark: A pixel which deviates by more than 6% from

neighboring pixels when illuminated to 70% of saturation.

Bright: A pixel whose dark current > 5,000 e−/pix/sec at

25

°C.

Cluster Defect

A grouping of not more than 5 adjacent point defects.

Column Defect

A grouping of > 5 contiguous point defects along a single

column.

A column containing a pixel with dark current

> 12,000 e−/pix/sec at 25

°C (Bright column).

A column that does not meet the minimum vertical CCD

charge capacity (Low charge capacity column).

A column that loses > 250 e− under 2 ke− (Trap defect).

Neighboring Pixels

The surrounding 128

× 128 pixels or ±64 columns/rows.

Defect Separation

Column and cluster defects are separated by no less than

2 pixels in any direction (excluding single pixel defects).

Figure 7. Active Pixel Region

1, 512

1, 1

768, 512

768, 1

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