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KAF-40000 Datasheet(PDF) 8 Page - ON Semiconductor

Part # KAF-40000
Description  Frame CCD Image Sensor
Download  26 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

KAF-40000 Datasheet(HTML) 8 Page - ON Semiconductor

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KAF−40000
www.onsemi.com
8
IMAGING PERFORMANCE
Table 4. TYPICAL OPERATIONAL CONDITIONS
Description
Test Condition − Unless
Otherwise Noted
Units
Notes
Readout Time (tREADOUT)
2093
ms
Includes 140 Overclock Pixels
Includes 178 Overclock Lines
Integration Time (tINT)
Variable
33
200
250
1000
ms
Low Light Tests
Saturation Tests
Brightfield Tests
Darkfield and Linearity Tests
Frame Time (tREADOUT + tINT)
Variable
2126 (2093 + 33)
2293 (2093 + 200)
2343 (2093 + 250)
3093 (2093 + 1000)
ms
Low Light Tests
Saturation Tests
Brightfield Tests
Darkfield and Linearity Tests
Line Time (tLINE)
364.3
ms
Includes 140 Overclock Pixels
Horizontal Clock Frequency
12 (as Tested)
MHz
Guaranteed for 18 MHz Operation
Temperature − Room
20
°C
Room Temperature
Temperature − Device
29
°C
Typical Device Operating Temperature at Test
Room Temperature
Operation
Nominal Operating Levels
Dual Parallel Split Mode
Table 5. SPECIFICATIONS
Description
Symbol
Min.
Nom.
Max.
Units
Verification
Plan15
Saturation Signal (Note 1)
NSAT
Ne−SAT
Q/V
1075
1300
42
31
mV
e−
mV/e−
Die
Photoresponse Non-Linearity (Note 2)
PRNL
5
10
%
Die
Photoresponse Non-Uniformity (Note 3)
PRNU
8.5
25
% p−p
Die
Readout Dark Signal (Note 4)
VDARK,READ
18
20
mV/s
Die
Integration Dark Signal (Note 5)
VDARK,INT
3
10
mV/s
Die
Dark Signal Non-Uniformity (Notes 6, 16)
DSNU
1
4
mV p−p
Die
Dark Signal Doubling Temperature (Note 4)
DT
5.5
°C
Design
Read Noise (Note 7)
NR
13
e− rms
Design
Dynamic Range (Note 8)
DR
70.2
dB
Design
Estimated Linear Dynamic Range
DRLIN (Est.)
69.3
dB
Design
Red-Green Hue Shift
Blue-Green Hue Shift (Note 9)
RGHueUnif
BGHueUnif
5
12
%
Die
Horizontal Charge Transfer Efficiency
(Note 10)
HCTE
0.999995
Die
Vertical Charge Transfer Efficiency
VCTE
0.999999
0.999998
Die
Blooming Protection (Note 11)
XAB
800
1400
x ESAT
Design
DC Offset, Output Amplifier (Note 12)
VODC
6.0
7.5
9.5
V
Die
Output Amplifier Bandwidth (Note 13)
f−3dB
220
MHz
Design
Output Impedance, Amplifier
ROUT
100
145
300
W
Die
Reset Feedthrough
VRFT
0.5
V
Design


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