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KAI-0373-ABA-CB-AE Datasheet(PDF) 1 Page - ON Semiconductor |
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KAI-0373-ABA-CB-AE Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 21 page © Semiconductor Components Industries, LLC, 2015 March, 2015 − Rev. 4 1 Publication Order Number: KAI−0373/D KAI-0373 768 (H) x 484 (V) Interline CCD Image Sensor Description The KAI−0373 is a high-performance silicon charge-coupled device (CCD) designed for video image sensing and electronic still photography. The device is built using an advanced true two-phase, double-polysilicon, NMOS CCD technology. The p+npn− photodetector elements eliminate image lag and reduce image smear while providing anti-blooming protection and electronic-exposure control. The total chip size is 9.9 (H) mm × 7.7 (V) mm. The KAI−0373 comes in monochrome versions, with an option with microlens for sensitivity improvement. Table 1. GENERAL SPECIFICATIONS Parameter Typical Value Architecture Interline Transfer CDD; Progressive Scan Number of Active Pixels 768 (H) × 484 (V) Number of Outputs 1 Pixel Size 11.6 mm(H) × 13.6 mm (V) Active Image Size 8.91 mm (H) × 6.58 mm (V), 11.1 mm (Diagonal), 2/3 ″ Optical Format Aspect Ratio 3:2 Output Sensitivity 9 mV/e− Photometric Sensitivity KAI−0373−ABA 2.2 V/lux−sec Charge Capacity 55 ke− Maximum Pixel Clock Speed 14.32 MHz Maximum Frame Rate 30 fps Package Type CerDIP Package Size 0.800 ″ [20.32 mm] Width 1.200 ″ [30.48 mm] Length Package Pins 24 Package Pin Spacing 0.100 ″ (2.54 mm) NOTE: All Parameters are specified at T = 40 °C unless otherwise noted. Features • High Resolution • High Sensitivity • High Dynamic Range • Low Noise Architecture • High Frame Rate • Binning Capability for Higher Frame Rate • Electronic Shutter Application • Intelligent Traffic Systems • Surveillance www.onsemi.com Figure 1. KAI−0373 Interline CCD Image Sensor See detailed ordering and shipping information on page 2 of this data sheet. ORDERING INFORMATION |
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