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KAI-16000-AXA-JD-AE Datasheet(PDF) 5 Page - ON Semiconductor |
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KAI-16000-AXA-JD-AE Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 27 page KAI−16000 www.onsemi.com 5 IMAGING PERFORMANCE Table 4. TYPICAL OPERATION CONDITIONS Unless otherwise noted, the Imaging Performance Specifications are measured using the following conditions. Description Condition Notes Frame Time 908 msec 1 Horizontal Clock Frequency 20 MHz Light Source Continuous red, green and blue illumination centered at 450, 530 and 650 nm 2, 3 Operation Nominal operating voltages and timing 1. Electronic shutter is not used. Integration time equals frame time. 2. LEDs used: Blue: Nichia NLPB500, Green: Nichia NSPG500S and Red: HP HLMP−8115. 3. For monochrome sensor, only green LED used. Table 5. SPECIFICATIONS Description Symbol Min. Nom. Max. Units Sample Plan 7 Temperature Tested At (5C) Notes Global Non−Uniformity n/a 2.5 5.0 %rms Die 27, 40 1 Maximum Photoresponse Nonlinearity NL n/a 2 % Design 2, 3 Maximum Gain Difference Between Outputs DG n/a 10 % Design 2, 3 Maximum Signal Error due to Nonlinearity Differences DNL n/a 1 % Design 2, 3 Horizontal CCD Charge Capacity HNe 100 ke− Design Vertical CCD Charge Capacity VNe 50 ke− Die 27, 40 Photodiode Charge Capacity PNe 28 30 ke− Die 27, 40 4 Horizontal CCD Charge Transfer Efficiency HCTE 0.99999 n/a Design Vertical CCD Charge Transfer Efficiency VCTE 0.99999 Design Photodiode Dark Current Ipd n/a n/a 40 0.01 350 0.1 e/p/s nA/cm2 Die 40 Vertical CCD Dark Current Ivd n/a n/a 400 0.12 1711 0.5 e/p/s nA/cm2 Die 40 Dark Current Doubling Temperature DT n/a 7 n/a °C Design Image Lag Lag n/a <10 50 e− Design Antiblooming Factor Xab 100 300 n/a Design Vertical Smear Smr n/a −80 −75 dB Design Read Noise ne−T 16 e−rms Design 5 Dynamic Range DR 65 dB Design 5, 6 Output Amplifier DC Offset Vodc 4 9.5 14 V Die 27, 40 Output Amplifier Bandwidth F−3db 140 MHz Design Output Amplifier Impedance ROUT 100 130 200 W Die 27, 40 Output Amplifier Sensitivity DV/DN 30 mV/e− Design 1. Per color 2. Value is over the range of 10% to 90% of photodiode saturation. 3. Value is for the sensor operated without binning. 4. The operating value of the substrate voltage, VAB, will be marked on the shipping container for each device. The value of Vab is set such that the photodiode charge capacity is 30,000 electrons. 5. At 30 MHz 6. Uses 20LOG (PNe/ ne−T) 7. “Die” indicates a parameter that is measured on every sensor during the production testing. “Design” designates a parameter that is quantified during the design verification activity. |
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