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KAI-16000-AXA-JD-AE Datasheet(PDF) 5 Page - ON Semiconductor

Part # KAI-16000-AXA-JD-AE
Description  Interline CCD Image Sensor
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

KAI-16000-AXA-JD-AE Datasheet(HTML) 5 Page - ON Semiconductor

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KAI−16000
www.onsemi.com
5
IMAGING PERFORMANCE
Table 4. TYPICAL OPERATION CONDITIONS
Unless otherwise noted, the Imaging Performance Specifications are measured using the following conditions.
Description
Condition
Notes
Frame Time
908 msec
1
Horizontal Clock Frequency
20 MHz
Light Source
Continuous red, green and blue illumination centered at 450, 530 and 650 nm
2, 3
Operation
Nominal operating voltages and timing
1. Electronic shutter is not used. Integration time equals frame time.
2. LEDs used: Blue: Nichia NLPB500, Green: Nichia NSPG500S and Red: HP HLMP−8115.
3. For monochrome sensor, only green LED used.
Table 5. SPECIFICATIONS
Description
Symbol
Min.
Nom.
Max.
Units
Sample
Plan 7
Temperature
Tested At
(5C)
Notes
Global Non−Uniformity
n/a
2.5
5.0
%rms
Die
27, 40
1
Maximum Photoresponse
Nonlinearity
NL
n/a
2
%
Design
2, 3
Maximum Gain Difference Between
Outputs
DG
n/a
10
%
Design
2, 3
Maximum Signal Error due to
Nonlinearity Differences
DNL
n/a
1
%
Design
2, 3
Horizontal CCD Charge Capacity
HNe
100
ke
Design
Vertical CCD Charge Capacity
VNe
50
ke
Die
27, 40
Photodiode Charge Capacity
PNe
28
30
ke
Die
27, 40
4
Horizontal CCD Charge Transfer
Efficiency
HCTE
0.99999
n/a
Design
Vertical CCD Charge Transfer
Efficiency
VCTE
0.99999
Design
Photodiode Dark Current
Ipd
n/a
n/a
40
0.01
350
0.1
e/p/s
nA/cm2
Die
40
Vertical CCD Dark Current
Ivd
n/a
n/a
400
0.12
1711
0.5
e/p/s
nA/cm2
Die
40
Dark Current Doubling Temperature
DT
n/a
7
n/a
°C
Design
Image Lag
Lag
n/a
<10
50
e
Design
Antiblooming Factor
Xab
100
300
n/a
Design
Vertical Smear
Smr
n/a
−80
−75
dB
Design
Read Noise
ne−T
16
erms
Design
5
Dynamic Range
DR
65
dB
Design
5, 6
Output Amplifier DC Offset
Vodc
4
9.5
14
V
Die
27, 40
Output Amplifier Bandwidth
F−3db
140
MHz
Design
Output Amplifier Impedance
ROUT
100
130
200
W
Die
27, 40
Output Amplifier Sensitivity
DV/DN
30
mV/e
Design
1. Per color
2. Value is over the range of 10% to 90% of photodiode saturation.
3. Value is for the sensor operated without binning.
4. The operating value of the substrate voltage, VAB, will be marked on the shipping container for each device. The value of Vab is set such
that the photodiode charge capacity is 30,000 electrons.
5. At 30 MHz
6. Uses 20LOG (PNe/ ne−T)
7. “Die” indicates a parameter that is measured on every sensor during the production testing. “Design” designates a parameter that is quantified
during the design verification activity.


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