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2SC536NG-NPA-AT Datasheet(PDF) 2 Page - ON Semiconductor

Part # 2SC536NG-NPA-AT
Description  Bipolar Transistor
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2SC536NG-NPA-AT Datasheet(HTML) 2 Page - ON Semiconductor

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2SA608N/2SC536N
No.6324-2/6
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)0.1
μA
Emitter Cutoff Current
IEBO
VEB=(--)5V, IC=0A
(--)0.1
μA
DC Current Gain
hFE1VCE=(--)6V, IC=(--)1mA
160*
560*
hFE2VCE=(--)6V, IC=(--)0.1mA
70
Gain-Bandwidth Product
fT
VCE=(--)6V, IC=(--)10mA
200
MHz
Output Capacitance
Cob
VCB=(--)6V, f=1MHz
(4.5)3.0
pF
Collector to Emitter Saturation Voltage
VCE(sat)
IC=(--)100mA, IB=(--)10mA
(--)0.3
V
Base to Emitter Saturation Voltage
VBE(sat)
IC=(--)100mA, IB=(--)10mA
(--)1.0
V
Collector to Base Breakdown Voltage
V(BR)CBO
IC=(--)10μA, IE=0A
(--)60
V
Collector to Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)50
V
Emitter to Base Breakdown Voltage
V(BR)EBO
IE=(--)10μA, IC=0A
(--)6
V
* : The 2SA608N / 2SC536N are classified by 1mA hFE as follow :
Rank
F
G
hFE
160 to 320
280 to 560
--16
--12
--8
--4
0
0
--10
--20
--30
--40
--50
IC -- VCE
--50
μA
--45
μA
--40μ
A
--35μ
A
--30μ
A
--25μA
--20μA
--15μA
--10μA
--5
μA
50μA
45μA
40μA
35μA
30μA
25μA
20
μA
15
μA
10
μA
5
μA
IB=0μA
2SA608N
IT00496
20
16
12
8
4
0
0
10
203040
50
IC -- VCE
IB=0μA
2SC536N
IT00497
--240
--200
--160
--120
--80
--40
0
0
--0.2
--0.4
--0.6
--0.8
--1.2
--1.0
IC -- VBE
IT00498
2SA608N
VCE= --6V
240
200
160
120
80
40
0
0
0.2
0.4
0.6
0.8
1.2
1.0
IC -- VBE
IT00499
2SC536N
VCE=6V
Collector to Emitter Voltage, VCE -- V
Collector to Emitter Voltage, VCE -- V
Base to Emitter Voltage, VBE -- V
Base to Emitter Voltage, VBE -- V


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