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Rev.1.0

SSF2305

20V P-Channel MOSFET

Parameter

Symbol

Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-20

V

Zero Gate Voltage Drain Current

-1

μA

Gate-Body Leakage Current

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

-0.5

-1

V

62

89

Drain-Source On-State Resistance

88

114

mΩ

Forward Transconductance

7

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

1160

PF

Output Capacitance

210

PF

Reverse Transfer Capacitance

F=1.0MHz

125

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

13.6

27.2

nS

Turn-on Rise Time

8.6

17.2

nS

Turn-Off Delay Time

73.6

147.2

nS

Turn-Off Fall Time

34.6

69.2

nS

Total Gate Charge

9.6

12.7

nC

Gate-Source Charge

1.1

nC

Gate-Drain Charge

2.6

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

-1.2

V

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on 1in

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.