SM73307 datasheet(4/25 Pages) TI

Part #	SM73307

Description	Dual Precision, 17 MHz, Low Noise, CMOS Input Amplifier

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Manufacturer	TI [Texas Instruments]

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SM73307

SNOSB88B – JUNE 2011 – REVISED APRIL 2013

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5V Electrical Characteristics

Unless otherwise specified, all limits are specified for TA = 25°C, V

+ = 5V, V− = 0V, V

CM = V

+/2. Boldface limits apply at the

temperature extremes.

Symbol

Parameter

Conditions

Min(1)

Typ(2)

Max(1)

Units

±150

−20°C ≤ TA ≤ 85°C

±10

±300

VOS

Input Offset Voltage

μV

±150

−40°C ≤ TA ≤ 125°C

±10

±400

Input Offset Voltage Temperature

TC VOS

–1.75

±4

μV/°C

Drift(3)(4)

1

−40°C ≤ TA ≤ 85°C

0.1

25

IB

Input Bias Current

VCM = 2.0V

(5) (4)

pA

1

−40°C ≤ TA ≤ 125°C

0.1

100

0.5

IOS

Input Offset Current

VCM = 2.0V

(4)

0.01

pA

50

85

CMRR

Common Mode Rejection Ratio

0V

≤ VCM ≤ 3.7V

100

dB

82

2.0V

≤ V+ ≤ 5.5V

85

100

V− = 0V, VCM = 0

80

PSRR

Power Supply Rejection Ratio

dB

1.8V

≤ V+ ≤ 5.5V

85

98

V− = 0V, VCM = 0

CMRR

≥ 80 dB

−0.3

4

CMVR

Common Mode Voltage Range

V

CMRR

≥ 78 dB

–0.3

4

VO = 0.3 to 4.7V

84

90

RL = 2 kΩ to V

+/2

80

AVOL

Open Loop Voltage Gain

dB

VO = 0.3 to 4.7V

90

95

RL = 10 kΩ to V

+/2

86

70

RL = 2 kΩ to V

+/2

32

77

Output Voltage Swing

High

60

RL = 10 kΩ to V

+/2

22

66

mV from

VOUT

either rail

75

RL = 2 kΩ to V

+/2

45

78

Output Voltage Swing

Low

60

RL = 10 kΩ to V

+/2

20

62

Sourcing to V−

46

66

VIN = 200 mV

(6)

38

IOUT

Output Current

mA

Sinking to V+

10.5

23

VIN = −200 mV

(6)

6.5

1.70

IS

Supply Current

(per channel)

1.30

mA

2.05

(1)

Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using the

Statistical Quality Control (SQC) method.

(2)

Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary

over time and will also depend on the application and configuration.

(3)

Offset voltage average drift is determined by dividing the change in VOS at the temperature extremes by the total temperature change.

(4)

This parameter is specified by design and/or characterization and is not tested in production.

(5)

Positive current corresponds to current flowing into the device.

(6)

The short circuit test is a momentary open loop test.

4

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