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MRF5812R1 Datasheet(PDF) 1 Page - Microsemi Corporation |
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MRF5812R1 Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 5 page  MSC1319.PDF 10-25-99 MRF5812, R1, R2 R1 suffix–Tape and Reel, 500 units R2 suffix–Tape and Reel, 2500 units DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 °C) Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 15 Vdc VCBO Collector-Base Voltage 30 Vdc VEBO Emitter-Base Voltage 2.5 Vdc IC Collector Current 200 mA Thermal Data P D Total Device Dissipation @ TC = 25ºC Derate above 25ºC 1.25 10 Watts mW/ ºC SO-8 Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 |
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