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MRF586 Datasheet(PDF) 2 Page - Microsemi Corporation

Part # MRF586
Description  RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

MRF586 Datasheet(HTML) 2 Page - Microsemi Corporation

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MSC1320.PDF 10-25-99
MRF586
ELECTRICAL SPECIFICATIONS (Tcase = 25
°C)
STATIC
(off)
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCEO
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc)
20
-
-
Vdc
BVEBO
Emitter-Base Breakdown Voltage
(IC= 0.1 mAdc)
3.0
-
-
Vdc
BVCBO
Collector-Base Breakdown Voltage
(IC=1.0 mAdc)
30
-
-
Vdc
ICBO
Collector-Base
(VCB = 10 Vdc)
-
50
-
µA
(on)
HFE
DC Current Gain
(IC = 50 mAdc, VCE = 5.0 Vdc)
50
-
200
-
DYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
fT
Current-Gain - Bandwidth Product
(IC = 90 mAdc, VCE = 14 Vdc, f = 300 MHz)
-
3.0
-
GHz
CCB
Collector Base Capacitance
VCB = 10V, IE = o, f = 1.0MHz
3.0
pF


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