MRF5943R2 datasheet(2/5 Pages) MICROSEMI

Part #	MRF5943R2

Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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Manufacturer	MICROSEMI [Microsemi Corporation]

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2 / 5 page

MSC1321.PDF 10-25-99

MRF5943, R1, R2

ELECTRICAL SPECIFICATIONS (Tcase = 25

°C)

STATIC

(off)

Symbol

Test Conditions

Value

Min.

Typ.

Max.

Unit

BVCEO

Collector-Emitter Breakdown Voltage

(IC = 5.0 mAdc, IB = 0)

30

-

Vdc

BVCBO

Collector-Base Breakdown Voltage

(IC = 0.1 mAdc, IE = 0)

40

-

Vdc

BVEBO

Emitter-Base Breakdown Voltage

(IE = 0.1 mAdc, IC = 0)

3.5

-

Vdc

ICBO

Collector Cutoff Current

(VCB = 20 Vdc, VBE = 0 Vdc)

-

.01

mA

ICEO

Collector Cutoff Current

(VCE = 20 Vdc, VBE = 0 Vdc)

-

.05

mA

(on)

HFE

DC Current Gain

(IC = 50 mAdc, VCE = 15 Vdc)

25

-

300

VCE(sat)

Collector-emitter Saturation Voltage

(IC = 100 mAdc, IB = 10 mA)

.2

Vdc

VBE(sat)

Collector-emitter Saturation Voltage

(IC = 100 mAdc, IB = 10 mA)

1.0

Vdc

DYNAMIC

Symbol

Test Conditions

Value

Min.

Typ.

Max.

Unit

Ftau

Current-Gain Bandwidth Product

(IC = 35 mAdc, VCE = 15 Vdc, f = 100 MHz)

-

1.3

-

GHz

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