V20120SG, VI20120SG

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Vishay General Semiconductor

Revision: 25-Oct-13

1

Document Number: 89244

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder bath temperature 275 °C max. 10 s,

per JESD 22-B106

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

MECHANICAL DATA

Case: TO-220AB and TO-262AA



Molding compound meets UL 94 V-0 flammability rating

Base

P/N-M3

-

halogen-free,

RoHS-compliant,

and

commercial grade



Base

P/NHM3

-

halogen-free,

RoHS-compliant,

and

commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

20 A

120 V

150 A

0.78 V

150 °C

Package

TO-220AB, TO-262AA

Diode variation

Single die

TO-220AB

1

2

3

1

K

2

3

TO-262AA

TMBS

®

V20120SG

VI20120SG

PIN 1

PIN 2

PIN 3

K

PIN 1

PIN 2

CASE

PIN 3

PARAMETER

SYMBOL

V20120SG

VI20120SG

UNIT

Maximum repetitive peak reverse voltage

120

V

Maximum average forward rectified current (fig. 1)

20

A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

150

A

dV/dt

10 000

V/μs

Operating junction and storage temperature range

-40 to +150

°C