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V20120SG Datasheet(PDF) 1 Page - Vishay Siliconix |
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V20120SG Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page V20120SG, VI20120SG www.vishay.com Vishay General Semiconductor Revision: 25-Oct-13 1 Document Number: 89244 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 120 V IFSM 150 A VF at IF = 20 A 0.78 V TJ max. 150 °C Package TO-220AB, TO-262AA Diode variation Single die TO-220AB 1 2 3 1 K 2 3 TO-262AA TMBS ® V20120SG VI20120SG PIN 1 PIN 2 PIN 3 K PIN 1 PIN 2 CASE PIN 3 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V20120SG VI20120SG UNIT Maximum repetitive peak reverse voltage VRRM 120 V Maximum average forward rectified current (fig. 1) IF(AV) 20 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs Operating junction and storage temperature range TJ, TSTG -40 to +150 °C |
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