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MSAEZ50N10A Datasheet(PDF) 2 Page - Microsemi Corporation |
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MSAEZ50N10A Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 2 page DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT Drain-to-Source Breakdown Voltage (Gate Shorted to Source) BVDSS VGS = 0 V, ID = 250 µA 100 V Temperature Coefficient of the Drain-to-Source Breakdown Voltage ∆BV DSS/ ∆T J TBD V/ °C Gate Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA 2.0 3.0 4.0 V Gate-to-Source Leakage Current IGSS VGS = ± 20V DC, VDS = 0 T J = 25 °C T J = 125 °C ±100 ±200 nA Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) IDSS VDS =0.8 •BV DSS TJ = 25 °C VGS = 0 V T J = 125 °C 25 250 µA Static Drain-to-Source On-State Resistance (1) RDS(on) VGS= 10V, ID= 32A T J = 25 °C I D= 50A T J = 25 °C I D= 32A T J = 125 °C 0.03 TBD 0.05 0.035 Ω Forward Transconductance (1) gfs VDS ≥ 15 V; I D = 32 A 15 28 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz 2400 730 430 3200 1100 650 pF Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) tr td(off) tf VGS = 10 V, V DS = 30 V, ID = 3 A, R G = 50 Ω 33 140 500 230 50 210 670 310 ns Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Qg(on) Qgs Qgd VGS = 10 V, V DS = 80V, ID = 30A 225 20 100 nC Body Diode Forward Voltage (1) VSD IF = IS, VGS = 0 V MSAE MSAF 1.6 1.2 1.8 V Reverse Recovery Time (Body Diode) trr IF = 10 A, MSAE -di/dt = 100 A/ µs, MSAF 50 170 ns Reverse Recovery Charge Qrr IF = 10 A, MSAE di/dt = 100 A/ µs, MSAF tbd 0.9 µC Electrical Parameters @ 25 °°C (unless otherwise specified) Notes (1) Pulse test, t ≤≤ 300 µµs, duty cycle δδ ≤≤ 2% (2) Microsemi Corp. does not manufacture the mosfet die; contact company for details. MSAEZ50N10A MSAFZ50N10A |
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