V30M120M-E3

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Vishay General Semiconductor

Revision: 11-Sep-13

3

Document Number: 89988

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Device

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.1

1

10

100

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

Instantaneous Forward Voltage (V)

T

T

T

T

T

0.0001

0.001

0.01

0.1

1

10

100

20

30

40

50

60

70

80

90

100

Percent of Rated Peak Reverse Voltage (%)

T

T

T

T

T

°C

10

100

1000

10 000

0.1

1

10

100

1000

Reverse Voltage (V)

T

f = 1.0 MHz

V

0.1

1

10

0.01

0.1

1

10

100

t - Pulse Duration (s)

Junction to Case

TO-220AB

0.113 (2.87)

0.103 (2.62)

0.370 (9.40)

0.360 (9.14)

0.415 (10.54) MAX.

0.635 (16.13)

0.625 (15.87)

PIN

0.160 (4.06)

0.140 (3.56)

0.057 (1.45)

0.045 (1.14)

0.105 (2.67)

0.095 (2.41)

0.104 (2.65)

0.096 (2.45)

0.205 (5.20)

0.195 (4.95)

0.035 (0.90)

0.028 (0.70)

0.154 (3.91)

0.148 (3.74)

1

3

2

0.185 (4.70)

0.175 (4.44)

0.055 (1.39)

0.045 (1.14)

0.145 (3.68)

0.135 (3.43)

0.350 (8.89)

0.330 (8.38)

1.148 (29.16)

1.118 (28.40)

0.560 (14.22)

0.530 (13.46)

0.022 (0.56)

0.014 (0.36)

0.110 (2.79)

0.100 (2.54)

0.603 (15.32)

0.573 (14.55)