VF20200G datasheet(1/5 Pages) VISHAY

Part #	VF20200G

Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier

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Manufacturer	VISHAY [Vishay Siliconix]

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V20200G, VF20200G, VB20200G, VI20200G

www.vishay.com

Vishay General Semiconductor

Revision: 16-Aug-13

1

Document Number: 89117

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.62 V at IF = 5 A

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s, per JESD

22-B106 (for TO-220AB, ITO-220AB and TO-262AA

package)

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters and reverse battery protection.

MECHANICAL DATA

Case:

TO-220AB,

ITO-220AB,

TO-263AB

and

TO-262AA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs max.

PRIMARY CHARACTERISTICS

IF(AV)

2 x 10 A

VRRM

200 V

IFSM

110 A

VF at IF = 10 A

0.71 V

TJ max.

150 °C

Package

TO-220AB, ITO-220AB,

TO-263AB, TO-262AA

Diode variations

Common cathode

TO-220AB

1

2

3

1

K

2

3

TO-263AB

1

2

K

TO-262AA

PIN 1

PIN 2

K

HEATSINK

PIN 1

PIN 2

CASE

PIN 3

PIN 1

PIN 2

PIN 3

PIN 1

PIN 2

PIN 3

K

V20200G

VF20200G

VI20200G

VB20200G

TMBS

®

ITO-220AB

1

2

3

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V20200G

VF20200G

VB20200G

VI20200G

UNIT

Max. repetitive peak reverse voltage

VRRM

200

V

Max. average forward rectified current (fig. 1)

per device

IF(AV)

20

A

per diode

10

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

IFSM

110

A

Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH 

per diode

EAS

60

mJ

Peak repetitive reverse current at tp = 2 μs, 1 kHz, 

TJ = 38 °C ± 2 °C per diode

IRRM

0.5

A

Voltage rate of change (rated VR)

dV/dt

10 000

V/μs

Isolation voltage (ITO-220AB only)



from terminal to heatsink t = 1 min

VAC

1500

V

Operating junction and storage temperature range

TJ, TSTG

- 40 to + 150

°C

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