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VF20200G Datasheet(PDF) 1 Page - Vishay Siliconix |
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VF20200G Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page V20200G, VF20200G, VB20200G, VI20200G www.vishay.com Vishay General Semiconductor Revision: 16-Aug-13 1 Document Number: 89117 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.62 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs max. PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 200 V IFSM 110 A VF at IF = 10 A 0.71 V TJ max. 150 °C Package TO-220AB, ITO-220AB, TO-263AB, TO-262AA Diode variations Common cathode TO-220AB 1 2 3 1 K 2 3 TO-263AB 1 2 K TO-262AA PIN 1 PIN 2 K HEATSINK PIN 1 PIN 2 CASE PIN 3 PIN 1 PIN 2 PIN 3 PIN 1 PIN 2 PIN 3 K V20200G VF20200G VI20200G VB20200G TMBS ® ITO-220AB 1 2 3 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V20200G VF20200G VB20200G VI20200G UNIT Max. repetitive peak reverse voltage VRRM 200 V Max. average forward rectified current (fig. 1) per device IF(AV) 20 A per diode 10 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 110 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode EAS 60 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode IRRM 0.5 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 V Operating junction and storage temperature range TJ, TSTG - 40 to + 150 °C |
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