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VF20200G Datasheet(PDF) 2 Page - Vishay Siliconix |
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VF20200G Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page V20200G, VF20200G, VB20200G, VI20200G www.vishay.com Vishay General Semiconductor Revision: 16-Aug-13 2 Document Number: 89117 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage IR = 1.0 mA TJ = 25 °C VBR 200 (min.) - V Instantaneous forward voltage per diode (1) IF = 5 A TJ = 25 °C VF 0.86 - V IF = 10 A 1.23 1.70 IF = 5 A TJ = 125 °C 0.62 - IF = 10 A 0.71 0.80 Reverse current per diode (2) VR = 180 V TJ = 25 °C IR 1.9 - μA TJ = 125 °C 1.6 - mA VR = 200 V TJ = 25 °C - 150 μA TJ = 125 °C 2.5 15 mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V20200G VF20200G VB20200G VI20200G UNIT Typical thermal resistance per diode RJC 3.2 5.5 3.2 3.2 °C/W ORDERING INFORMATION (EXAMPLE) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V20200G-E3/4W 1.88 4W 50/tube Tube ITO-220AB VF20200G-E3/4W 1.75 4W 50/tube Tube TO-263AB VB20200G-E3/4W 1.39 4W 50/tube Tube TO-263AB VB20200G-E3/8W 1.39 8W 800/reel Tape and reel TO-262AA VI20200G-E3/4W 1.45 4W 50/tube Tube Case Temperature (°C) 25 15 0 075 175 20 25 100 150 5 50 125 10 Resistive or Inductive Load VF20200G V(B,I)20200G D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 0.8 D = 1.0 Average Forward Current (A) 9 5 0 06 12 7 28 1 410 3 6 8 2 4 D = t p/T t p T |
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