VB30100S datasheet(2/5 Pages) VISHAY

Part #	VB30100S

Description	High-Voltage Trench MOS Barrier Schottky Rectifier

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Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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For technical questions within your region, please contact one of the following:

Document Number: 88941

2

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Revision: 23-Oct-09

V30100S, VF30100S, VB30100S, VI30100S

Vishay General Semiconductor

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

≤ 40 ms

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve

Fig. 2 - Forward Power Loss Characteristics

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Breakdown voltage

IR = 10 mA

TA = 25 °C

VBR

105 (minimum)

-

V

Instantaneous forward voltage

IF = 5 A

TA = 25 °C

VF (1)

0.47

-

V

IF = 10 A

0.55

-

IF = 30 A

0.80

0.91

IF = 5 A

TA = 125 °C

0.39

-

IF = 10 A

0.49

-

IF = 30 A

0.69

0.78

Reverse current

VR = 70 V

TA = 25 °C

IR (2)

27

-

μA

TA = 125 °C

11

-

mA

VR = 100 V

TA = 25 °C

70

1000

μA

TA = 125 °C

23

45

mA

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V30100S

VF30100S

VB30100S

VI30100S

UNIT

Typical thermal resistance

RθJC

2.0

4.0

2.0

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-220AB

V30100S-E3/4W

1.875

4W

50/tube

Tube

ITO-220AB

VF30100S-E3/4W

1.805

4W

50/tube

Tube

TO-263AB

VB30100S-E3/4W

1.380

4W

50/tube

Tube

TO-263AB

VB30100S-E3/8W

1.380

8W

800/reel

Tape and reel

TO-262AA

VI30100S-E3/4W

1.455

4W

50/tube

Tube

35

30

25

20

15

10

5

0

25

50

75

100

125

150

Case Temperature (°C)

Mounted on Specific Heatsink

VF30100S

V(B,I)30100S

Resistive or Inductive Load

0

4

8

12

16

20

24

28

32

0

4

8

12162024283236

Average Forward Current (A)

D = t

p/T

t

p

T

D = 0.1

D = 0.2

D = 0.3

D = 0.5

D = 0.8

D = 1.0

Similar Part No. - VB30100S

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	VB30100S	168Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Revision: 31-Jul-08
	VB30100S	149Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 23-Oct-09
	VB30100S	149Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 23-Oct-09
	VB30100S	149Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Revision: 22-Dec-14
	VB30100S-E3	156Kb / 6P	High Voltage Trench MOS Barrier Schottky Rectifier Revision: 14-Dec-16

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Manufacturer	Part #	Datasheet	Description
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