V40100PW_15 datasheet(2/4 Pages) VISHAY

Part #	V40100PW

Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Manufacturer	VISHAY [Vishay Siliconix]

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V40100PW

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Vishay General Semiconductor

Revision: 22-Dec-13

2

Document Number: 89179

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

 40 ms



RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve

Fig. 2 - Forward Power Loss Characteristics Per Diode

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Breakdown voltage

IR = 1.0 mA

TA = 25 °C

VBR

100 (minimum)

-

V

Instantaneous forward voltage per diode

IF = 5 A

TA = 25 °C

VF (1)

0.48

-

V

IF = 10 A

0.56

-

IF = 20 A

0.69

0.77

IF = 5 A

TA = 125 °C

0.39

-

IF = 10 A

0.50

-

IF = 20 A

0.61

0.69

Reverse current per diode

VR = 70 V

TA = 25 °C

IR (2)

23

-

μA

TA = 125 °C

11

-

mA

VR = 100 V

TA = 25 °C

-

1000

μA

TA = 125 °C

29

80

mA

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V40100PW

UNIT

Typical thermal resistance

per diode

RJC

1.5

°C/W

per device

0.8

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-3PW

V40100PW-M3/4W

4.5

4W

30/tube

Tube

50

40

30

20

10

0

25

50

75

100

125

150

175

Case Temperature (°C)

Resistive or Inductive Load

Mounted on Specific Heatsink

D = 0.1

D = 0.2

D = 0.3

D = 0.5

D = 0.8

D = 1.0

18

12

10

8

6

4

2

0

4

8

12

16

20

24

Average Forward Current (A)

16

14

D = t

p/T

t

p

T

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