VBT1045CBP-M3

www.vishay.com

Vishay General Semiconductor

Revision: 30-Apr-13

1

Document Number: 87960

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Trench MOS Barrier Schottky Rectifier

for PV Solar Cell Bypass Protection

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets

MSL

level

1,

per

J-STD-020,

LF maximum peak of 245 °C

• Material categorization: For definitions of compliance

TYPICAL APPLICATIONS

For use in solar cell junction box as a bypass diode for

protection, using DC forward current without reverse bias.

MECHANICAL DATA

Case: TO-263AB



Molding compound meets UL 94 V-0 flammability rating

Base

P/N-M3

-

halogen-free,

RoHS-compliant,

and

commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



M3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

Notes

PRIMARY CHARACTERISTICS

Package

TO-263AB

2 x 5.0 A

45 V

100 A

0.41 V

150 °C

200 °C

Diode variation

Common cathode

TO-263AB

1

2

K

PIN 1

PIN 2

K

HEATSINK

VBT1045CBP

TMBS

®

PARAMETER

SYMBOL

VBT1045CBP

UNIT

Maximum repetitive peak reverse voltage

45

V

Maximum average forward rectified current (fig. 1)

per device

10

A

per diode

5

Peak forward surge current 8.3 ms single half sine-wave



superimposed on rated load per diode

100

A

Operating junction and storage temperature range (AC mode)

- 40 to + 150

°C

Junction temperature in DC forward current



without reverse bias, t

 1 h

 200

°C