NB3N51032

http://onsemi.com

4

Symbol

Parameter

Rating

Unit

Positive Power Supply with respect to GND (VDDXD and VDDODA)

4.6

V

V

Operating Temperature Range

−40 to +85

°C

Storage Temperature Range

−65 to +150

°C

Thermal Resistance (Junction−to−Ambient) (Note 3)

0 lfpm

500 lfpm

74

64

°C/W

°C/W

Thermal Resistance (Junction−to−Case)

50

°C/W

Wave Solder

265

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

2. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and not valid simultaneously. If

stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected.

3. JEDEC standard multilayer board − 2S2P (2 signal, 2 power).

Symbol

Characteristic

Min

Typ

Max

Unit

Power Supply Voltage (VDDXD and VDDODA)

3.135

3.3

3.465

V

GND

Power Supply Ground (GNDXD and GNDODA)

0

V

Power Supply Current, 200 MHz Output, −0.75% spread

100

mA

Power Supply Current when OE is Set Low

55

mA

Input HIGH Voltage (X1/CLK, S0, S1, SS0, SS1 and OE)

2000

mV

Input LOW Voltage (X1/CLK, S0, S1, SS0, SS1 and OE)

GND − 300

800

mV

Output HIGH Voltage for HCSL Output (Note 5)

660

850

mV

Output LOW Voltage for HCSL Output (Note 5)

−150

0

mV

Crossing Voltage Magnitude (Absolute) for HCSL Output (Notes 6 and 7)

250

550

mV

150

mV

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit

board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared

operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit

values are applied individually under normal operating conditions and not valid simultaneously.

pF and current biasing resistor set at 475

W. See Figure 9. Guaranteed by characterization.

5. Measurement taken from single−ended waveform.

6. Measured at crossing point where the instantaneous voltage value of the rising edge of CLKx+ equals the falling edge of CLKx−.

7. Refers to the total variation from the lowest crossing point to the highest, regardless of which edge is crossing. Refers to all crossing points

for this measurement.

for any particular system.