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NB3N51032DTR2G Datasheet(PDF) 4 Page - ON Semiconductor |
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NB3N51032DTR2G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 13 page NB3N51032 http://onsemi.com 4 Table 5. MAXIMUM RATINGS (Note 2) Symbol Parameter Rating Unit VDD Positive Power Supply with respect to GND (VDDXD and VDDODA) 4.6 V VI Input Voltage with respect to GND (VIN) −0.5 V to VDD+0.5 V V TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction−to−Ambient) (Note 3) 0 lfpm 500 lfpm 74 64 °C/W °C/W qJC Thermal Resistance (Junction−to−Case) 50 °C/W Tsol Wave Solder 265 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and not valid simultaneously. If stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected. 3. JEDEC standard multilayer board − 2S2P (2 signal, 2 power). Table 6. DC CHARACTERISTICS (VDD = 3.3 V ±5%, GND = 0 V, TA = −40°C to +85°C, Note 4) Symbol Characteristic Min Typ Max Unit VDD Power Supply Voltage (VDDXD and VDDODA) 3.135 3.3 3.465 V GND Power Supply Ground (GNDXD and GNDODA) 0 V IDD Power Supply Current, 200 MHz Output, −0.75% spread 100 mA IDDOE Power Supply Current when OE is Set Low 55 mA VIH Input HIGH Voltage (X1/CLK, S0, S1, SS0, SS1 and OE) 2000 VDD + 300 mV VIL Input LOW Voltage (X1/CLK, S0, S1, SS0, SS1 and OE) GND − 300 800 mV VOH Output HIGH Voltage for HCSL Output (Note 5) 660 850 mV VOL Output LOW Voltage for HCSL Output (Note 5) −150 0 mV Vcross Crossing Voltage Magnitude (Absolute) for HCSL Output (Notes 6 and 7) 250 550 mV DVcross Change in Magnitude of Vcross for HCSL Output (Notes 6 and 8) 150 mV NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 4. VDDXD and VDDODA power pins must be shorted to power supply voltage VDD and GNDXD and GNDODA ground pins must be shorted to power supply ground GND. Measurement taken with outputs terminated with RS = 33.2 W, RL = 49.9 W, with test load capacitance of 2 pF and current biasing resistor set at 475 W. See Figure 9. Guaranteed by characterization. 5. Measurement taken from single−ended waveform. 6. Measured at crossing point where the instantaneous voltage value of the rising edge of CLKx+ equals the falling edge of CLKx−. 7. Refers to the total variation from the lowest crossing point to the highest, regardless of which edge is crossing. Refers to all crossing points for this measurement. 8. Defined as the total variation of all crossing voltage of rising CLKx+ and falling CLKx−. This is maximum allowed variance in the VCROSS for any particular system. |
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