NSBC114YDXV6T5G datasheet(4/8 Pages) ONSEMI

Part #	NSBC114YDXV6T5G

Description	Dual NPN Bias Resistor Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MUN5214DW1, NSBC114YDXV6, NSBC114YDP6

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4

TYPICAL CHARACTERISTICS

MUN5214DW1, NSBC114YDXV6

1000

100

10

1

Figure 2. VCE(sat) vs. IC

10

020

30

IC, COLLECTOR CURRENT (mA)

40

50

Figure 3. DC Current Gain

Figure 4. Output Capacitance

010

20

50

IC, COLLECTOR CURRENT (mA)

Figure 5. Output Current vs. Input Voltage

100

10

1

0.1

0.01

0.001

012

3

4

Vin, INPUT VOLTAGE (V)

56

7

8

9

10

Figure 6. Input Voltage vs. Output Current

VR, REVERSE VOLTAGE (V)

IC/IB = 10

−55

°C

150

°C

25

°C

f = 10 kHz

IE = 0 A

TA = 25°C

VO = 5 V

150

°C

−55

°C

25

°C

VO = 0.2 V

25

°C

1

0.1

0.01

40

30

0.1

1

100

10

VCE = 10 V

25

°C

150

°C

−55

°C

3.6

3.2

2.8

2.4

2

1.6

1.2

0.8

0.4

0

010

20

30

40

50

100

10

1

0.1

150

°C

−55

°C

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NSBC114YDXV6T5G Datasheet(PDF) 4 Page - ON Semiconductor

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