MBRB25HxxCT datasheet(1/5 Pages) VISHAY

Part #	MBRB25HxxCT

Description	Dual Common Cathode Schottky Rectifier

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Manufacturer	VISHAY [Vishay Siliconix]

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MBR25HxxCT, MBRF25HxxCT, MBRB25HxxCT

www.vishay.com

Vishay General Semiconductor

Revision: 12-Jun-13

1

Document Number: 88789

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Dual Common Cathode Schottky Rectifier

High Barrier Technology for Improved High Temperature Performance

FEATURES

• Power pack

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of

245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s, per

JESD 22-B106 (for TO-220AB and ITO-220AB package)

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of switching

mode

power

supplies,

freewheeling

diodes,

DC/DC

converters, or polarity protection application.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

Molding compound meets UL 94 V-0 flammability rating



Base P/N-E3 - RoHS-compliant, commercial grade



Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

IF(AV)

2 x 15 A

VRRM

35 V to 60 V

IFSM

150 A

VF

0.54 V, 0.60 V

IR

100 μA

TJ max.

175 °C

Package

TO-220AB, ITO-220AB, TO-263AB

Diode variations

Common cathode

TO-263AB

CASE

PIN 2

PIN 1

PIN 3

TO-220AB

MBR25HxxCT

ITO-220AB

MBRB25HxxCT

PIN 1

PIN 2

K

HEATSINK

1

2

3

1

2

K

MBRF25HxxCT

PIN 2

PIN 1

PIN 3

1

2

3

MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBR25H35CT

MBR25H45CT

MBR25H50CT

MBR25H60CT

UNIT

Maximum repetitive peak reverse voltage

VRRM

35

45

50

60

V

Working peak reverse voltage

VRWM

35

45

50

60

Maximum DC blocking voltage

VDC

35

45

50

60

Max. average forward



rectified current (fig. 1)

total device

IF(AV)

30

A

per diode

15

Non-repetitive avalanche energy per diode



at 25 °C, IAS = 4 A, L = 10 mH

EAS

80

mJ

Peak forward surge current 8.3 ms single half



sine-wave superimposed on rated load per diode

IFSM

150

A

Peak repetitive reverse surge current per diode



at tp = 2.0 μs, 1 kHz

IRRM

1.0

0.5

A

Peak non-repetitive reverse energy



(8/20 μs waveform)

ERSM

25

20

mJ

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