ESD8004

www.onsemi.com

2

See Application Note AND8308/D for further description of

survivability specs.

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Working Peak Voltage

Test Current

Holding Reverse Voltage

Holding Reverse Current

Dynamic Resistance

Maximum Peak Pulse Current

I

V

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse Working Voltage

I/O Pin to GND

3.3

V

Breakdown Voltage

5.5

7.0

V

Reverse Leakage Current

1.0

mA

Holding Reverse Voltage

I/O Pin to GND

1.19

V

Holding Reverse Current

I/O Pin to GND

25

mA

Clamping Voltage (Note 1)

IEC61000−4−2, ±8 KV Contact

See Figures 1 and 2

V

Clamping Voltage

TLP (Note 2)

See Figures 5 through 8

IEC 61000−4−2 Level 2 equivalent

(±4 kV Contact, ±4 kV Air)

4.9

−4.5

V

IEC 61000−4−2 Level 4 equivalent

(±8 kV Contact, ±15 kV Air)

8.0

−8.0

Dynamic Resistance

I/O Pin to GND

GND to I/O Pin

0.40

0.45

W

Junction Capacitance

(See Figures 9 & 10)

0.30

0.25

0.15

0.35

0.30

0.20

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. For test procedure see Figures 3 and 4 and application note AND8307/D.

2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.

0

−10

−20

−30

−40

−50

−60

−70

−80

−90

−20

0

20

40

60

80

100

140

120

Figure 1. IEC61000−4−2 +8 kV Contact ESD

Clamping Voltage

Figure 2. IEC61000−4−2 −8 kV Contact

Clamping Voltage

−20

0

20

40

60

80

100

140

120

90

TIME (ns)

TIME (ns)

80

70

60

50

40

30

20

10

0

−10

10