DIODE ARRAY SERIES

6/90 Rev 1.1 2/94

Copyright

© 1994

11861 Western Avenue

∞

∞

∞

∞

∞ Garden Grove, CA 92841

2

(714) 898-8121

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∞ FAX: (714) 893-2570

Breakdown Voltage (V

Output Current (I

Continuous ................................................................

60V

500mA

Operating Junction Temperature

Hermetic (J, F Packages) ............................................

Storage Temperature Range ............................

150

°C

-65

°C to 200°C

Note 1. Exceeding these ratings could cause damage to the device.

Note 2. Applicable for each diode.

J Package:

θ

30°C/W

θ

F Package (10 Pin):

θ

80°C/W

θ

F Package (14 Pin):

θ

80°C/W

θ

THERMAL DATA

Note A. Junction Temperature Calculation: T

J

= T

A

+ (P

D

x

θ

JA

).

Note B. The above numbers for

θ

thermal resistance of the package in a standard mount-

ing configuration. The

θ

guidelines for the thermal performance of the device/pc-

board system. All of the above assume no ambient

airflow.

Operating Ambient Temperature Range

SG5768 .......................................................... -55

°C to 150°C

SG5770 .......................................................... -55

°C to 150°C

SG5772 .......................................................... -55

°C to 150°C

Operating Ambient Temperature Range

SG5774 .......................................................... -55

°C to 150°C

SG6506 .......................................................... -55

°C to 150°C

SG6507 .......................................................... -55

°C to 150°C

SG6508 .......................................................... -55

°C to 150°C

SG6509 .......................................................... -55

°C to 150°C

Note 3. Range over which the device is functional.

ELECTRICAL CHARACTERISTICS

(Unless otherwise specified, these specifications apply for the operating temperature of T

are used which maintains junction and case temperatures equal to the ambient temperature.)

1.0

1.1

1.5

1.0

100

50

4

40

20

V

V

V

V

V

nA

µA

pf

ns

Breakdown Voltage (V

Forward Voltage (V

Reverse Current (I

Forward Recovery Time (t

(Note 4)

Reverse Recovery Time (t

(Note 4)

60

SG5768/SG6506

Test Conditions

Units

Parameter

Note 4. The parameters, although guaranteed, are not 100% tested in production.

Min. Typ. Max.

I

Duty Cycle

≤ 2%, 300 µs pulse

I

I

I

I

V

V

V

I

I