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SG6506 Datasheet(PDF) 2 Page - Microsemi Corporation |
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SG6506 Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 5 page DIODE ARRAY SERIES 6/90 Rev 1.1 2/94 LINFINITY Microelectronics Inc. Copyright © 1994 11861 Western Avenue ∞ ∞ ∞ ∞ ∞ Garden Grove, CA 92841 2 (714) 898-8121 ∞ ∞ ∞ ∞ ∞ FAX: (714) 893-2570 ABSOLUTE MAXIMUM RATINGS (Note 1 & 2) Breakdown Voltage (V BR) ................................................... Output Current (I O), TC = 25°C Continuous ................................................................ 60V 500mA Operating Junction Temperature Hermetic (J, F Packages) ............................................ Storage Temperature Range ............................ 150 °C -65 °C to 200°C Note 1. Exceeding these ratings could cause damage to the device. Note 2. Applicable for each diode. J Package: Thermal Resistance-Junction to Case, θ JC .................. 30°C/W Thermal Resistance-Junction to Ambient, θ JA .............. 80°C/W F Package (10 Pin): Thermal Resistance-Junction to Case, θ JC .................. 80°C/W Thermal Resistance-Junction to Ambient, θ JA ............ 145°C/W F Package (14 Pin): Thermal Resistance-Junction to Case, θ JC .................. 80°C/W Thermal Resistance-Junction to Ambient, θ JA ............ 140°C/W THERMAL DATA Note A. Junction Temperature Calculation: T J = T A + (P D x θ JA ). Note B. The above numbers for θ JC are maximums for the limiting thermal resistance of the package in a standard mount- ing configuration. The θ JA numbers are meant to be guidelines for the thermal performance of the device/pc- board system. All of the above assume no ambient airflow. Operating Ambient Temperature Range SG5768 .......................................................... -55 °C to 150°C SG5770 .......................................................... -55 °C to 150°C SG5772 .......................................................... -55 °C to 150°C Operating Ambient Temperature Range SG5774 .......................................................... -55 °C to 150°C SG6506 .......................................................... -55 °C to 150°C SG6507 .......................................................... -55 °C to 150°C SG6508 .......................................................... -55 °C to 150°C SG6509 .......................................................... -55 °C to 150°C RECOMMENDED OPERATING CONDITIONS (Note 3) Note 3. Range over which the device is functional. ELECTRICAL CHARACTERISTICS (Unless otherwise specified, these specifications apply for the operating temperature of T A = 25°C for each diode. Low duty cycle pulse testing techniques are used which maintains junction and case temperatures equal to the ambient temperature.) 1.0 1.1 1.5 1.0 100 50 4 40 20 V V V V V nA µA pf ns Breakdown Voltage (V BR) Forward Voltage (V F) Reverse Current (I R) Capacitance (C) (Note 4) Forward Recovery Time (t fr ) (Note 4) Reverse Recovery Time (t rr) (Note 4) 60 SG5768/SG6506 Test Conditions Units Parameter Note 4. The parameters, although guaranteed, are not 100% tested in production. Min. Typ. Max. I R = 10µA Duty Cycle ≤ 2%, 300 µs pulse I F = 100mA I F = 200mA I F = 500mA I F = 10mA, TA = -55°C V R = 40V V R = 40V, TA = 150°C V R = 0V, f = 1MHz, Pin-to-pin I F = 500mA, tr ≤ 15ns, Vfr = 1.8V, RS = 50Ω I F = IR = 200mA, irr = 20mA, RL = 100Ω |
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