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BAV70M3T5G Datasheet(PDF) 1 Page - ON Semiconductor |
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BAV70M3T5G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2015 April, 2015 − Rev. 2 Publication Order Number: BAV70M3/D 1 BAV70M3 Dual Switching Diode Common Cathode The BAV70M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for switching applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. Features • Reduces Board Space • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25 °C PD 265 2.1 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 470 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25 °C PD 640 5.1 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 195 °C/W Junction and Storage Temperature TJ, Tstg − 55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 70 V DUAL COMMON CATHODE SWITCHING DIODES Device Package Shipping† ORDERING INFORMATION BAV70M3T5G SOT−723 (Pb−Free) 8000/Tape & Reel SOT−723 CASE 631AA STYLE 3 MARKING DIAGRAM 3 CATHODE 1 ANODE 2 ANODE www.onsemi.com †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. AL = Specific Device Code M = Date Code AL M 1 3 2 1 |
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