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MMDF4207 Datasheet(PDF) 3 Page - ON Semiconductor |
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MMDF4207 Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 11 page MMDF4207 http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage(1) (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS 20 − − 14.9 − − Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 55°C) IDSS − − − − 1.0 5.0 μAdc Gate−Body Leakage Current (VGS = ±12 Vdc, VDS = 0 Vdc) IGSS − − 100 nAdc ON CHARACTERISTICS(1) Gate Threshold Voltage(1) (VDS = VGS, ID = 0.25 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) 0.6 − − −2.6 − − Vdc mV/°C Static Drain−to−Source On−Resistance(1) (VGS = 4.5 Vdc, ID = 6.2 Adc) (VGS = 2.5 Vdc, ID = 5.0 Adc) RDS(on) − − 22 34 33 50 mΩ Forward Transconductance (VDS = 10 Vdc, ID = 6.2 Adc)(1) gFS − 15 − Mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 15 Vdc, VGS = 0 V, f = 1.0 MHz) Ciss − 1210 1694 pF Output Capacitance Coss − 560 784 Transfer Capacitance Crss − 340 476 SWITCHING CHARACTERISTICS(2) Turn−On Delay Time (VDS = 10 Vdc, ID = 1.0 Adc, VGS = 10 Vdc, RG = 6.0 Ω)(1) td(on) − 14 21 ns Rise Time tr − 20 64 Turn−Off Delay Time td(off) − 68 74 Fall Time tf − 84 127 Gate Charge (VDS = 10 Vdc, ID = 6.2 Adc, VGS = 4.5 Vdc)(1) QT − 27 31 nC Q1 − 4.5 − Q2 − 11.7 − Q3 − 9.3 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 1.7 Adc, VGS = 0 Vdc)(1) (IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − 0.87 0.72 1.2 − Vdc Reverse Recovery Time (IS = 1.7 Adc, VGS = 0 Vdc, dIS/dt = 100 A/μs)(1) trr − 43 80 ns ta − 20 − tb − 23 − Reverse Recovery Stored Charge QRR − 0.04 − μC (1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperatures. (3) Repetitive rating; pulse width limited by max. junction temperature. |
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Similar Description - MMDF4207 |
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