MMDF4207 datasheet(3/11 Pages) ONSEMI

Part #	MMDF4207

Description	Dual P-Channel Field Effect Transistors

Download	11 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

3 / 11 page

MMDF4207

http://onsemi.com

3

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage(1)

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

20

−

14.9

−

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 55°C)

IDSS

−

1.0

5.0

μAdc

Gate−Body Leakage Current (VGS = ±12 Vdc, VDS = 0 Vdc)

IGSS

−

100

nAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage(1)

(VDS = VGS, ID = 0.25 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

0.6

−

−2.6

−

Vdc

mV/°C

Static Drain−to−Source On−Resistance(1)

(VGS = 4.5 Vdc, ID = 6.2 Adc)

(VGS = 2.5 Vdc, ID = 5.0 Adc)

RDS(on)

−

22

34

33

50

mΩ

Forward Transconductance (VDS = 10 Vdc, ID = 6.2 Adc)(1)

gFS

−

15

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 15 Vdc, VGS = 0 V,

f = 1.0 MHz)

Ciss

−

1210

1694

pF

Output Capacitance

Coss

−

560

784

Transfer Capacitance

Crss

−

340

476

SWITCHING CHARACTERISTICS(2)

Turn−On Delay Time

(VDS = 10 Vdc, ID = 1.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)(1)

td(on)

−

14

21

ns

Rise Time

tr

−

20

64

Turn−Off Delay Time

td(off)

−

68

74

Fall Time

tf

−

84

127

Gate Charge

(VDS = 10 Vdc, ID = 6.2 Adc,

VGS = 4.5 Vdc)(1)

QT

−

27

31

nC

Q1

−

4.5

−

Q2

−

11.7

−

Q3

−

9.3

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 1.7 Adc, VGS = 0 Vdc)(1)

(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

−

0.87

0.72

1.2

−

Vdc

Reverse Recovery Time

(IS = 1.7 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/μs)(1)

trr

−

43

80

ns

ta

−

20

−

tb

−

23

−

Reverse Recovery Stored

Charge

QRR

−

0.04

−

μC

(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperatures.

(3) Repetitive rating; pulse width limited by max. junction temperature.

Similar Part No. - MMDF4207

Manufacturer	Part #	Datasheet	Description
Motorola, Inc	MMDF4C03HD	275Kb / 12P	COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS
ON Semiconductor	MMDF4C03HD	368Kb / 16P	Complementary SO??, Dual Power MOSFET June, 2004 ??Rev. XXX
ON Semiconductor	MMDF4C03HDR2	368Kb / 16P	Complementary SO??, Dual Power MOSFET June, 2004 ??Rev. XXX
Motorola, Inc	MMDF4N01HD	281Kb / 10P	DUAL TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS
ON Semiconductor	MMDF4N01HD	257Kb / 12P	N?묬hannel Power MOSFET June, 2004 ??Rev. XXX

More results

Similar Description - MMDF4207

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	J174	33Kb / 6P	P-channel silicon field-effect transistors April 1995
New Jersey Semi-Conduct...	J174	80Kb / 1P	P-channel silicon field-effect transistors
New Jersey Semi-Conduct...	2N3993	136Kb / 1P	P-CHANNEL JINCTION FIELD EFFECT TRANSISTORS
NXP Semiconductors	PMBFJ174	34Kb / 6P	P-channel silicon field-effect transistors April 1995
Motorola, Inc	MGSF3441VT1	102Kb / 6P	TMOS Single P-channel Field Effect Transistors
New Jersey Semi-Conduct...	2N3329	86Kb / 1P	P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS
New Jersey Semi-Conduct...	RFM5P12	88Kb / 2P	P-Channel Enhancement-Mode Power Field-Effect Transistors
GE Solid State	RFM10P12	242Kb / 4P	P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
New Jersey Semi-Conduct...	RFP5P12	88Kb / 2P	P-Channel Enhancement-Mode Power Field-Effect Transistors
List of Unclassifed Man...	RFM6P08	445Kb / 8P	P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS

More results

MMDF4207 Datasheet(PDF) 3 Page - ON Semiconductor

MMDF4207 Datasheet(HTML) 3 Page - ON Semiconductor

Similar Part No. - MMDF4207

Similar Description - MMDF4207

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Datasheet Download

Link URL