NSBA114TDXV6T5G datasheet(4/8 Pages) ONSEMI

Part #	NSBA114TDXV6T5G

Description	Dual PNP Bias Resistor Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MUN5115DW1, NSBA114TDXV6, NSBA114TDP6

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4

TYPICAL CHARACTERISTICS

MUN5115DW1, NSBA114TDXV6

75C

25C

−25C

Figure 2. VCE(sat) vs. IC

Figure 3. DC Current Gain

Figure 4. Output Capacitance

Figure 5. Output Current vs. Input Voltage

Vin, INPUT VOLTAGE (V)

VR, REVERSE VOLTAGE (V)

Figure 6. Input Voltage vs. Output Current

IC, COLLECTOR CURRENT (mA)

1

0.1

50

40

20

10

0

IC, COLLECTOR CURRENT (mA)

100

10

1

100

10

1

0.001

1000

6

50

40

30

20

10

0

2

4

8

100

6

5

4

3

2

1

0

0.001

1

10

9

8

7

10

30

20

10

0

0.1

1

40

50

75C

25C

TA = −25C

75C

25C

TA = −25C

75C

25C

TA = −25C

0.01

0.1

30

10

VCE = 10 V

f = 10 kHz

lE = 0 A

TA = 25C

VO = 5 V

VO = 0.2 V

5

1

3

7

9

IC/IB = 10

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