NIMD6001ANR2G datasheet(4/9 Pages) ONSEMI

Part #	NIMD6001ANR2G

Description	Dual N-Channel Driver

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Manufacturer	ONSEMI [ON Semiconductor]

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NIMD6001N, NIMD6001AN

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TYPICAL ELECTRICAL CHARACTERISTICS

Figure 2. Drain Current vs. Drain−Source

Voltage and Gate−Source Voltage

Figure 3. Transfer Function (pulsed). Pulse

duration = 80 ms, duty cycle < 0.5%; VDS = 2 V

VDS, DRAIN−SOURCE VOLTAGE (V)

VGS, GATE−SOURCE VOLTAGE (V)

1.5

2.0

1.0

0.5

0

1

2

3

4

5

6

7

4.0

3.5

3.0

2.5

2.0

1.5

0

2

4

6

8

10

Figure 4. Drain−Source On Resistance vs.

Junction Temperature

Figure 5. Body Diode Forward Voltage vs.

Junction Temperature

TJ, JUNCTION TEMPERATURE (°C)

100

80

60

40

20

0

−20

−40

0

20

40

60

80

100

120

100

80

60

40

20

0

−20

−40

0.6

0.7

0.8

0.9

1.0

Figure 6. Off−State Drain Current vs.

Drain−Source Voltage (includes feedback

network current)

Figure 7. Diagnostic Feedback Voltage vs.

Drain−Source Voltage

VDS, DRAIN−SOURCE VOLTAGE (V)

70

60

50

40

30

20

10

0

0.5

1.0

1.5

2.0

2.5

3.0

70

60

50

40

30

20

10

0

1

2

3

4

5

VGS = 3.5 V

3.0 V

2.5 V

TJ = 25°C

TJ = 125°C

TJ = −40°C

120 140

VGS = 5 V, ID = 3 A

VGS = 10 V, ID = 3.3 A

120 140

IS = 3 A

TJ = 25°C

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