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NLAS9099MN1R2G Datasheet(PDF) 1 Page - ON Semiconductor |
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NLAS9099MN1R2G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 10 page © Semiconductor Components Industries, LLC, 2007 July, 2007 - Rev. P2 1 Publication Order Number: NLAS9099/D NLAS9099 Product Preview Dual DPDT Ultra-Low RON Switch The NLAS9099 is a dual independent ultra-low RON DPDT analog switch. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS9099 can handle a balanced microphone/speaker/ring-tone generator in a monophone mode. The device contains a break-before-make feature. Features • Suitable for Dual SIM Cards • Single Supply Operation 1.65 to 4.5 V VCC Function Directly from LiON Battery • Maximum Breakdown Voltage: 5.5 V • Tiny 3 x 3 mm QFN Pb-Free Package Meet JEDEC MO-220 Specifications • Low Static Power • This is a Pb-Free Device* Typical Applications • Cell Phone Speaker/Microphone Switching • Ringtone-Chip/Amplifier Switching • Four Unbalanced (Single-Ended) Switches • Stereo Balanced (Push-Pull) Switching Important Information • ESD Protection: HBM (Human Body Model) > 8000 V MM (Machine Model) > 400 V • Continuous Current Rating Through each Switch ±300 mA • Conforms to: JEDEC MO-220, Issue H, Variation VEED-6 • Pin for Pin Compatible with STG3699 For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com QFN-16 CASE 485AE MARKING DIAGRAMS See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. ORDERING INFORMATION 1 16 NLAB 3699 ALYW G G 1 A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb-Free Package (Note: Microdot may be in either location) http://onsemi.com 4 1 16 13 9 12 58 14 7 15 6 310 211 D1 1S1 Vcc 4S2 2S2 GND 3S1 D3 3S2 3-4IN 4S1 D4 D2 2S1 1-2IN 1S2 |
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