NSBA123TDP6 datasheet(2/5 Pages) ONSEMI

Part #	NSBA123TDP6

Description	Dual PNP Bias Resistor Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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NSBA123TDP6

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THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

NSBA123TDP6 (SOT−963) ONE JUNCTION HEATED

Total Device Dissipation

TA = 25C

(Note 1)

(Note 2)

Derate above 25C

(Note 1)

(Note 2)

PD

231

269

1.9

2.2

MW

mW/C

Thermal Resistance,

Junction to Ambient

(Note 1)

(Note 2)

RqJA

540

464

C/W

NSBA123TDP6 (SOT−963) BOTH JUNCTION HEATED (Note 3)

Total Device Dissipation

TA = 25C

(Note 1)

(Note 2)

Derate above 25C

(Note 1)

(Note 2)

PD

339

408

2.7

3.3

MW

mW/C

Thermal Resistance,

Junction to Ambient

(Note 1)

(Note 2)

RqJA

369

306

C/W

Junction and Storage Temperature Range

TJ, Tstg

−55 to +150

C

1. FR−4 @ 100 mm2, 1 oz. copper traces, still air.

2. FR−4 @ 500 mm2, 1 oz. copper traces, still air.

3. Both junction heated values assume total power is sum of two equally powered channels.

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