Electronic Components Datasheet Search |
|
NSBA123TDP6 Datasheet(PDF) 2 Page - ON Semiconductor |
|
NSBA123TDP6 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page NSBA123TDP6 http://onsemi.com 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit NSBA123TDP6 (SOT−963) ONE JUNCTION HEATED Total Device Dissipation TA = 25C (Note 1) (Note 2) Derate above 25C (Note 1) (Note 2) PD 231 269 1.9 2.2 MW mW/C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA 540 464 C/W NSBA123TDP6 (SOT−963) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation TA = 25C (Note 1) (Note 2) Derate above 25C (Note 1) (Note 2) PD 339 408 2.7 3.3 MW mW/C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA 369 306 C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 C 1. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 2. FR−4 @ 500 mm2, 1 oz. copper traces, still air. 3. Both junction heated values assume total power is sum of two equally powered channels. |
Similar Part No. - NSBA123TDP6 |
|
Similar Description - NSBA123TDP6 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |