NSBA123TDP6T5G datasheet(3/5 Pages) ONSEMI

Part #	NSBA123TDP6T5G

Description	Dual PNP Bias Resistor Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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NSBA123TDP6

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ELECTRICAL CHARACTERISTICS (TA =25C, common for Q1 and Q2, unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current

(VCB =50V, IE =0)

ICBO

−

100

nAdc

Collector-Emitter Cutoff Current

(VCE =50V, IB =0)

ICEO

−

500

nAdc

Emitter-Base Cutoff Current

(VEB = 6.0 V, IC =0)

IEBO

−

4.0

mAdc

Collector-Base Breakdown Voltage

(IC =10 mA, IE =0)

V(BR)CBO

50

−

Vdc

Collector-Emitter Breakdown Voltage (Note 4)

(IC = 2.0 mA, IB =0)

V(BR)CEO

50

−

Vdc

ON CHARACTERISTICS

DC Current Gain (Note 4)

(IC = 5.0 mA, VCE =10V)

hFE

160

350

−

Collector-Emitter Saturation Voltage (Note 4)

(IC = 10 mA, IB = 0.3 mA)

VCE(sat)

−

0.25

V

Input Voltage (Off)

(VCE = 5.0 V, IC = 100 mA)

Vi(off)

−

0.6

−

Vdc

Input Voltage (On)

(VCE = 0.2 V, IC = 10 mA)

Vi(on)

−

0.9

−

Vdc

Output Voltage (On)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

VOL

−

0.2

Vdc

Output Voltage (Off)

(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

VOH

4.9

−

Vdc

Input Resistor

R1

1.5

2.2

2.9

kW

Resistor Ratio

R1/R2

−

4. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle  2%.

Figure 1. Derating Curve

AMBIENT TEMPERATURE (C)

125

100

75

50

25

0

−25

−50

0

50

100

150

200

250

150

(1)

(1) SOT−963; 100 mm2, 1 oz. Copper Trace

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