NVMFD5483NLT1G datasheet(4/6 Pages) ONSEMI

Part #	NVMFD5483NLT1G

Description	Power MOSFET Dual N?묬hannel

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Manufacturer	ONSEMI [ON Semiconductor]

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NVMFD5483NL

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TYPICAL CHARACTERISTICS

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Qg, TOTAL GATE CHARGE (nC)

50

40

30

20

60

10

0

100

200

300

400

500

1000

12

10

8

6

4

2

0

4

10

12

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

100

10

1

10

100

1000

0.8

0.6

0.5

0.4

0.3

0.2

0.1

0

1

3

4

5

7

9

10

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

100

10

1

0.1

0.01

0.1

1

10

1000

TJ = 25°C

VGS = 0 V

Ciss

Coss

Crss

2

6

8

TJ = 25°C

VDD = 48 V

ID = 10 A

QT

Qgs

VDD = 48 V

VGS = 4.5 V

ID = 5 A

tr

tf

td(off)

td(on)

0.7

0.9

2

6

8

TJ = 25°C

VGS = 0 V

TC = 25°C

VGS = 10 V

Single Pulse

RDS(on) Limit

Thermal Limit

Package Limit

10

ms

10 ms

dc

600

700

24

18

16

14

Qgd

100

800

900

20 22

100

ms

1 ms

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NVMFD5483NLT1G Datasheet(PDF) 4 Page - ON Semiconductor

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